Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Abstract

The electrical properties of Ag/Poly(3-hexylthiophene)/Silicon nanowires heterostructure (Ag/P3HT/SiNWs) were investigated. Silicon nanowires (SiNWs) were obtained by metal-assisted chemical etching method in one-step process. P3HT polymer was deposited on SiNWs surfaces by electroless deposition method for different immersion durations (d im). The morphology of SiNWs before and after deposition of P3HT polymer has been examined by scanning electron microscope (SEM). The formation of nanowires as well as the presence of P3HT on their surfaces can be seen in SEM images. Current-voltage (I-V) measurements were carried out on Ag/P3HT/SiNWs by varying d im from 30 to 210 min. The electrical measurements on the different junctions at room temperature showed a rectifying effect. For 30 min, the ideality factor of the Schottky diode was reduced from 4 to 1,4. By using the Cheung method, the diode parameters of the different structures are determined and discussed. The different hetrostructures have been annealed at 100 °C, 200 and 300 °C. The characteristic parameters were calculated as a function of annealing temperature. The optimum temperature for these heterostructures characteristics is 100 °C. The interface states, the trapping levels and the thermal activation of the free carriers are the main factors involved in the conduction phenomenon through Ag/P3HT/SiNWs heterostructures.

Study of the morphological, optical, structural and electrical properties of silicon nanowires at varying concentrations of the catalyst precursor

“…The ideality factor (η) and barrier height (φ b ) of a Schottky diode is calculated using the following equations 46 (2) 𝐼 = 𝐼 𝑠( 𝑒 𝑞(𝑉 -𝑅 𝑠 𝐼) 𝜂𝑘𝑇 -1 )…”

INVESTIGATION OF ANNEALING TEMPERATURE ON STRUCTURAL, MORPHOLOGIES AND ELECTRICAL PROPERTIES Al/Y2O3/SiNWs/n-Si MOS CAPACITOR

“…Among them, MACE is one of the simplest methods for the fabrication of SiNWs due to its low cost, large surface area, and good repeatability. Moreover, SiNWs fabricated by this method have good crystalline quality [3]- [6].…”

“…Post deposition annealing (PDA) temperature is well known treatment and has been used in various technological industries for the improvement of stoichiometry oxides and their interface states of the fabricated devices [6], [7]. This can have a huge impact on the electrical characteristics of the devices at large.…”

“…This can have a huge impact on the electrical characteristics of the devices at large. However, there is no report in the literature about the influence of annealing temperature on the SiNWs with Y2O3 [7], [8].Despite several efforts have been focused on annealing effects of SiNWs based solar cells with Al2O3 and SiNWs nanocomposite with P3HT [6]. Therefore, exploiting the possible mechanisms of annealing effects on structural and morphology properties of SiNWs with Y2O3 will help us understand various phenomena in the structure and it can be beneficial for various fields such as solar energy, sensors, and electronic devices.…”

Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect

“…Conjugated polymers are materials of great interest in photovoltaic, organic electronics and optoelectronic devices [9][10][11]. The formation of a heterostructure containing organic material (conjugated polymer) and inorganic semiconductor material (SiNWs) gives interesting electrical results [12,13]. The mixture of SiNWs and MEH-PPV polymer in a single hybrid layer has been adopted by researchers for applications in photovoltaic domain [14,15].…”