Electrical characteristics and the energy band diagram of the isotype n-Si1−x Gex/n-Si heterojunction in relaxed structures

Orlov, L. K.; Horváth, Zs. J.; Потапов, А. В.; Orlov, M. L.; Ivin, S. V.; Vdovin, V. I.; Steinman, E. A.; Фомин, В. М.

doi:10.1134/1.1825562

Cited by 7 publications

(10 citation statements)

References 8 publications

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“…The formation of macroclusters for the Si 1 -x Ge x layers thicker than 5 a also leads to the emergence of low-intensity peaks in the energy range 0.75-0.85 eV. The third spectral region with a clearly pronounced narrow peak with the energy 1.1 eV is attributed to recombination of bound excitons with emission of a transverse optical phonon in the Si substrate [1][2][3][4][5][6].…”

Section: Modelmentioning

confidence: 99%

“…One of the types of nanodimensional structures which are now widely used is Si/Ge nanostructures. Discovery of efficient electroluminescence in the wavelength region 1.5 µ m in these structures stimulated their intense study in view of possible fabrication of light-emitting devices for fiber-optics communication systems, which are easily integrated with the Si technology of fabrication of integrated microcircuits [1][2][3][4][5][6]. In addition, it was found that the periodic Si/Si 1 -x Ge x superlattices can be used for the development of nanoelectronic devices whose operation is based on the effect of resonance tunneling of electrons [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…Deposition of the Ge layers on (001) Si leads, depending on technological modes, to the formation of elastically stressed Si 1 -x Ge x nanolayers or self-assembly of Si 1 -x Ge x islands of various shapes, namely, pyramidal clusters or dome clusters [1][2][3][4][5][6]. The absence of dislocations at the material interfaces, manifestation of the quantum-size effect, and the possibility of realization of quasi-direct band-to-band transitions of localized charge carriers make these structures very promising for optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

“…Experimental investigations showed that the photoluminescence (PL) spectrum of the Si/Si 1 -x Ge x nanostructures includes several peaks with the energies 0.75-0.85, 0.9-1.05, and 1.1 eV, which is characteristic of several recombination channels [1,2]. However, ambiguity of interpretation of emergence of these peaks in various reports [3][4][5][6] and the necessity of determination of parameters of the structure in order to increase the efficiency of emission of light require theoretical study of recombination processes in the Si/Si 1 -x Ge x nanostructures.…”

Section: Introductionmentioning

confidence: 99%

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10.1007/s11453-008-1009-x

2010

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Using the solution of the 2D Schrödinger equation, systematic features of distribution of charge carriers in the Si/Si 1 -x Ge x nanostructures and variations in the efficiency of radiative recombination when pyramidal 2D clusters are transformed into 3D dome clusters with increasing thickness of nanolayers are established. The effect of the composition of the layers on the efficiency of the elastic stress in the structure and, as a consequence, the variation in conduction bands and valence band of the Si 1 -x Ge x nanostructures is taken into account. On realization of the suggested kinetics model, which describes recombination processes in crystalline structures, saturation of radiation intensity with increasing the pump intensity caused by an increase in the contribution of the Auger recombination is observed. A decrease in the contribution of the nonradiative Auger recombination is attained by decreasing the injection rate of carriers into the clusters, and more precisely, by an increase in the cluster concentration and an increase in the rate of radiative recombination.

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Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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10.1007/s11453-008-1009-x

2010

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“…The properties of the n-p junction in the Si 1-x Ge x layers, which doesn't contain intermediate Si layer, have been disscussed in details in [13,14].…”

Section: Diode Characteristics Of the Structures For Electron Transpomentioning

confidence: 99%

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

Orlov

nikova

Orlov

et al. 2013

Physica E: Low-dimensional Systems and Nanostructures

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The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si 1-x Ge x heterostructures with two-dimensional electron channel (n e ≥ 10 12 cm -2 ) in an elastically strained silicon layer of nanometer thickness have been studied. The detailed calculation of the potential and of the electrons distribution in layers of the structure was carried out to understand the observed phenomena.The dependence of the tunneling transparency of the barrier separating the 2D and 3D transport channels in the structure, was studied as a function of the doping level, the degree of blurring boundaries, layer thickness, degree of relaxation of elastic stresses in the layers of the structure. Tunnel characteristics of the barrier between the layers were manifested by the appearance of a tunneling component in the current-voltage characteristics of real structures. Instabilities, manifested during the magnetotransport measurements using both weak and strong magnetic fields are explained by the transitions of charge carriers from the two-dimensional into three-dimensional state, due to interlayer tunneling transitions of electrons.

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10.1007/s11451-008-2019-7

2010

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The electrical properties of elastically stressed FET-like Si/Si 1 -x Ge x layered heterostructures ( x < 0.2) with a modulated dopant concentration are studied. It is presumed that the amplitude of a narrow (~6-nmthick) potential well in the Si layer corresponds to the amplitude of a fluctuation potential giving rise to nanoscale inhomogeneities in the Si channel. The structures in question undergo a phase transition from the insulating to metallic behavior as the electron density in the Si channel is varied. In a magnetic field, the structures with metallic conductivity have negative magnetoresistance (NMR) for both the longitudinal and transverse directions of the applied magnetic field with respect to the transport current passing through the structure. Investigating the dependence of NMR on the magnetic field strength showed that the main contribution to NMR is due to weak localization. Peculiar properties are also found in electrical measurements of the diode characteristics of the structures in question. In particular, the capacitance-voltage characteristics of these structures show welldefined resonance features, possibly related to one-and quasi-zero-dimensional inclusions existing in addition to two-dimensional charge carriers in the inhomogeneous two-dimensional film.

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Electrical characteristics and the energy band diagram of the isotype n-Si1−x Gex/n-Si heterojunction in relaxed structures

Cited by 7 publications

References 8 publications

10.1007/s11453-008-1009-x

10.1007/s11453-008-1009-x

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

10.1007/s11451-008-2019-7

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