Abstract:AlGaN/GaN high‐electron‐mobility transistor (HEMT)‐based gated‐anode diodes (GADs) for a 5.8 GHz rectenna application are proposed. An anode of the GAD is formed by connecting a gate and a drain of a normally off GaN HEMT. Herein, a wide recessed HEMT structure reported in the previous article is modified to a buried‐type recessed gate HEMT structure. The gate‐to‐cathode distance is optimized to maximize device performance. Typical direct current (DC) characteristics of the HEMTs are a threshold voltage (Vth) … Show more
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