Electrical Characteristics of n-Type FinFETs Under &lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;$V_{T}$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt; Ion Implantation on SOI Substrate

Shen, Tien-Szu; Chou, Ching-Chuan; Wang, Mu‐Chun; Liao, Wen‐Shiang; Chao, T. S.; Lan, Wen−How

doi:10.1109/tps.2018.2876367

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“…The Hf-based wafer in this work is a bulk type. However, the tested devices for the SiON-based one are on the buried oxide (BOX) layer with a floating bulk [6,7], as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Degradation and Recovery of SiON<sub>x</sub> and Hf-Based Dielectric under Electrical-Field Stress

Chen

Wang

et al. 2020

KEM

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Using the electrical-field (E-field) stress at the positive and negative directions to generate the degradation and form the recovery effect is a useful metrology to evaluate the integrity of gate dielectric. This consequence deeply influences the drive current of 2D MOSFET or 3D FinFET species. According to the experimental results with the short and long-term stresses, we found the electrical performance of Hf-based tested devices represented the better recovery than that of SiON-based ones. And the recovery effect is more regular, not only in VT shift, but in gate leakage due to the high-k dielectric probably providing the polar effect and more trap assistants.

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“…The Hf-based wafer in this work is a bulk type. However, the tested devices for the SiON-based one are on the buried oxide (BOX) layer with a floating bulk [6,7], as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%