Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Ajimsha, R. S.; Jayaraj, M. K.; Kukreja, L. M.

doi:10.1007/s11664-007-0365-4

Cited by 44 publications

(22 citation statements)

References 30 publications

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“…Thus the junction was found to be rectifying and the turn-on voltage is about 1.5 V. The maximum forward-to-reverse current ratio was found to be about 15. This is on the lower side of that normally reported 6,19 . While Basu et al 6 have reported a forward to reverse current ratio of 80 at 1 V; Ajimsha et al 19 reported a value of 1000 at 5 V for n-ZnO/p-Si heterojunctions.…”

Section: I-v Characteristicscontrasting

confidence: 54%

“…This is on the lower side of that normally reported 6,19 . While Basu et al 6 have reported a forward to reverse current ratio of 80 at 1 V; Ajimsha et al 19 reported a value of 1000 at 5 V for n-ZnO/p-Si heterojunctions. Basu et al 6 deposited ZnO films on p-Si substrate by chemical vapor deposition (CVD) technique and Ajimsha et al 19 prepared ZnO films by pulsed LASER deposition technique.…”

Section: I-v Characteristicscontrasting

confidence: 54%

“…While Basu et al 6 have reported a forward to reverse current ratio of 80 at 1 V; Ajimsha et al 19 reported a value of 1000 at 5 V for n-ZnO/p-Si heterojunctions. Basu et al 6 deposited ZnO films on p-Si substrate by chemical vapor deposition (CVD) technique and Ajimsha et al 19 prepared ZnO films by pulsed LASER deposition technique. Mridha et al 5 reported an extremely high value of forward to reverse current ratio of 5700 at 5 V for sol-gel fabricated films on p-Si.…”

Section: I-v Characteristicsmentioning

confidence: 98%

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Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

2012

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Zinc oxide (ZnO) thin films were deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M) of zincate bath and fixed pH (11.00-11.10). Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM) reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains) on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag) on ZnO and Aluminum (Al) on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

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Section: I-v Characteristicscontrasting

confidence: 54%

Section: I-v Characteristicscontrasting

confidence: 54%

Section: I-v Characteristicsmentioning

confidence: 98%

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Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

2012

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“…They reported several difficulties caused specially by the large lattice mismatch between Si and the ZnO layer and the formation of amorphous SiOx layers [17]. Ajimsha et al [18] reported the electrical characteristics of n-ZnO/p-Si heterojunction diodes grown by PLD at different oxygen pressures. Kumar et al [19] characterized sol-gel derived yttrium-doped n-ZnO/p-Si heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Electrical Study of Si/PS/ZnO:In Solar Cell Structure

et al. 2015

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Indium doped zinc oxide (IZO) thin films have been grown on porous silicon, in order to develop solar cell structure, by rf-sputtering at room temperature using indium (4 at %) doped nanocrystalline powder previously synthesized by the sol-gel method. Such layers are polycrystalline with a hexagonal wurtzite structure with a thickness of about 400 nm and preferential orientation in (002) crystallographic direction. Electrical study under illumination reveals that this type of nanostructure is promising for solar cell application. By comparing Si/PS/IZO and Si/PS/ZnO/IZO structures, we illustrate a satisfactory photovoltaic conversion with these structures. Also we reveal that interposing an undoped ZnO layer leads to a degradation of PV parameters, specially the short-circuit current (I sc ) was affected. In fact, I sc decreases from 3 mA to 0.8 mA by adding the undoped ZnO thin layer. The open circuit voltage is less affected. A decay of 30 mV was recorded. C-V analysis gave a carrier density of about 10 16 cm -3 for both cells.

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“…However, such reports are still very limited. [15][16][17][18][19][20][21][22][23][24] In this work, n-ZnO/p-Si heterojunctions were constructed, in which the n-ZnO film served as an UV absorber, and Si as a visible and near-infrared absorber. The photogenerated carriers are separated at the n-ZnO/p-Si interface.…”

Section: Introductionmentioning

confidence: 99%

Light-Harvesting in n-ZnO/p-Silicon Heterojunctions

Shan

et al. 2010

Journal of Elec Materi

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Zinc oxide (ZnO) films were deposited onto Si to form n-ZnO/p-Si heterojunctions. Under the illumination of by both ultraviolet (UV) light and sunlight, obvious photovoltaic behavior was observed. It was found that the conversion efficiency of the heterojunctions increased significantly with increasing thickness of the ZnO film, and the mechanism for light-harvesting in the heterojunctions is discussed. The results suggest that ZnO films may be helpful to increasing the harvesting of UV photons, thus decreasing the thermalization loss of UV energy in Si-based solar cells.

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Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Cited by 44 publications

References 30 publications

Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

Electrical Study of Si/PS/ZnO:In Solar Cell Structure

Light-Harvesting in n-ZnO/p-Silicon Heterojunctions

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