Electrical characteristics of oxygen doped DNA molecules

Kim, Kyoungseob; Yoon, Myoungwon; Koo, Jonghyun; Roh, Yonghan

doi:10.1016/j.tsf.2011.04.085

Cited by 5 publications

(5 citation statements)

References 14 publications

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“…Kim et al . [ 11 ] observed that the conductivity of DNA molecules increased with heat. This was regardless of whether the heating was carried out under ambient or non-ambient conditions, while using N 2 and O 2 as the dopant at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Al-Ta’ii

Amin

Periasamy

2015

Sensors

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Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

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Section: Introductionmentioning

confidence: 99%

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Al-Ta’ii

Amin

Periasamy

2015

Sensors

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“…[4][5][6] Many efforts [7][8][9][10][11][12][13][14][15][16] have been devoted to understanding the mechanism of charge transfer and transport in DNA. From an electrical device perspective, double barrier resonant tunneling structures, 17 spin specific electron conductor, 18,19 field effect transistor, 20 trinary logic, 21 optomechanical molecular motor, 22 negative differential resistance, 23 detection of lesions by repair proteins 24 and doping 25 are in principle possible with DNA. Furthermore, recent work has also shown that it is possible to detect diseases by measuring the electrical conductivity of DNA.…”

Section: Introductionmentioning

confidence: 99%

Unified model for conductance through DNA with the Landauer-Büttiker formalism

Edirisinghe

Rabbani

et al. 2013

Phys. Rev. B

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In this work, we model the zero-bias conductance for the four different DNA strands that were used in conductance measurement experiment [A. K. Mahapatro, K. J. Jeong, G. U. Lee and D. B. Janes, Nanotechnology, 18, 195202 (2007)]. Our approach consists of three elements: (i) abinitio calculations of DNA, (ii) Green's function approach for transport calculations and (iii) the use of two parameters to determine the decoherence rates. We first study the role of the backbone. We find that the backbone can alter the coherent transmission significantly at some energy points by interacting with the bases, though the overall shape of the transmission stays similar for the two cases. More importantly, we find that the coherent electrical conductance is tremendously smaller than what the experiments measure. We consider DNA strands under a variety of different experimental conditions and show that even in the most ideal cases, the calculated coherent conductance is much smaller than the experimental conductance. To understand the reasons for this, we carefully look at the effect of decoherence. By including decoherence, we show that our model can rationalize the measured conductance of the four strands, both qualitatively and quantitatively. We find that the effect of decoherence on G : C base pairs is crucial in getting agreement with the experiments. However, the decoherence on G : C base pairs alone does not explain the experimental conductance in strands containing a number of A : T base pairs. Including decoherence on A : T base pairs is also essential. By fitting the experimental trends and magnitudes in the conductance of the four different DNA molecules, we estimate for the first time that the deocherence rate is 6 meV for G : C and 1.5 meV for A : T base pairs.

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“…The simulation methodology involves four main steps: structure building, energy minimization, density functional theory calculations, and charge transport calculations. First, the Nucleic Acid Builder (NAB) software package 24 is used to obtain the atomic coordinates of double-stranded B-DNA structures. Next, we used PACMOL 25 to obtain energy minimized structures with explicit solvent (water) environment within a 60 Å × 60 Å × 60 Å cubic solvation box.…”

Section: Dna Current Simulation Framework and Resultsmentioning

confidence: 99%

Performance analysis of DNA crossbar arrays for high-density memory storage applications

Mohammad

Wang

et al. 2023

Sci Rep

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Deoxyribonucleic acid (DNA) has emerged as a promising building block for next-generation ultra-high density storage devices. Although DNA has high durability and extremely high density in nature, its potential as the basis of storage devices is currently hindered by limitations such as expensive and complex fabrication processes and time-consuming read–write operations. In this article, we propose the use of a DNA crossbar array architecture for an electrically readable read-only memory (DNA-ROM). While information can be ‘written’ error-free to a DNA-ROM array using appropriate sequence encodings its read accuracy can be affected by several factors such as array size, interconnect resistance, and Fermi energy deviations from HOMO levels of DNA strands employed in the crossbar. We study the impact of array size and interconnect resistance on the bit error rate of a DNA-ROM array through extensive Monte Carlo simulations. We have also analyzed the performance of our proposed DNA crossbar array for an image storage application, as a function of array size and interconnect resistance. While we expect that future advances in bioengineering and materials science will address some of the fabrication challenges associated with DNA crossbar arrays, we believe that the comprehensive body of results we present in this paper establishes the technical viability of DNA crossbar arrays as low power, high-density storage devices. Finally, our analysis of array performance vis-à-vis interconnect resistance should provide valuable insights into aspects of the fabrication process such as proper choice of interconnects necessary for ensuring high read accuracies.

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Electrical characteristics of oxygen doped DNA molecules

Cited by 5 publications

References 14 publications

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Unified model for conductance through DNA with the Landauer-Büttiker formalism

Performance analysis of DNA crossbar arrays for high-density memory storage applications

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