Electrical characteristics of polymer field-effect transistors with poly(methylsilsesquioxane) gate dielectrics on plastic substrates

Low‐Temperature Processable Organic‐Inorganic Hybrid Gate Dielectrics for Solution‐Based Organic Field‐Effect Transistors

“…[ 25 ] The fabrication of OFETs on plastic substrates using the PMSQ gate dielectrics has also been demonstrated. [ 26 ] In this communication, we report the electrical performances and operational stabilities of polymer-based OFETs with low-temperature processable PMSQ gate dielectrics. The electrical characteristics of the devices with the PMSQ dielectrics are compared with those of devices with conventional, thermally grown SiO 2 dielectrics.…”

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

“…2 3 Therefore, polysilsesquioxane (PSQ), which is a solution processible inorganic-organic hybrid dielectric material, has been investigated by various research groups because PSQ is not only a good insulator but also a low-temperature curable polymer through the sol-gel reaction. [4][5][6][7][8] For example, Bao et al investigated three types of PSQ cured at 135 C as gate dielectrics for TFTs using various organic semiconductors. They reported that pentacene TFTs using gate dielectric layers of PSQ compring methyl and phenyl groups as functional groups exhibited carrier mobility of 0.1 cm 2 V −1 s −1 .…”

Investigation of polysilsesquioxane as a gate dielectric material for organic field-effect transistors

“…[2][3][4] In this study, we have investigated inorganic-organic hybrid gate dielectric layer of polysilsesquioxane (PSQ) that can be cured at low enough temperatures for low-cost plastic substrates. 5 It is well known that the surface properties of gate dielectric layers considerably affect the performance of the fabricated FETs. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] It is thus important to control the surface roughness and energy of gate dielectrics.…”