Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Liang, Yan-Kui; Lin, Jim J.; Peng, Li-Chi; Hua, Yi Miao; Chou, Tsung-Te; Kei, Chi-Chung; Lu, Chin Lung; Huang, Huai-Ying; Yeong, Sai Hooi; Lin, Yu-Ming; Liu, Po–Tsun; Chang, Edward Yi; Lin, Chih-Min

doi:10.1109/ted.2022.3232476

Cited by 19 publications

(4 citation statements)

References 31 publications

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“…According to the literature, 96 ohms can be an acceptable low resistance value. 61,62 According to the results, graphene and the annealing process make a positive contribution to graphene-doped IZO material. For instance, the material's band gap decreased, and its resistance dropped to an acceptable level.…”

Section: Resultsmentioning

confidence: 98%

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In₂O₃:ZnO Thin Film

Akırtın,

Korkmaz,

Pat

2024

ECS J. Solid State Sci. Technol.

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An investigation of the optical and electric properties of post-annealed In2O3:ZnO:Graphene thin films was performed using a thermionic vacuum arc thin film deposition technology. The post-annealed effects were defined by an investigation of the sample's optical and electric properties. The lowest band gap value of 3.22 eV for the deposited thin film was obtained. Deposited thin films were transparent. The sample AA2 can be used as a transparent conductive oxide material with a resistance of 95 /cm. Sample AA2 was annealed at 400°C for 30 min, and sample AA1 was annealed at 150°C for 15 min. The graphene peaks for the samples were detected using a Fourier transform infrared spectra. The indium and zinc atomic ratios of the sample were approximately 2% and 10%, respectively. As a result, the deposited sample AA2 is a good candidate for use as transparent conductive oxide. Deposited films have high transparency and relatively low resistance. Finally, graphene is a good doping material for semiconductors.

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Section: Resultsmentioning

confidence: 98%

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In₂O₃:ZnO Thin Film

Akırtın,

Korkmaz,

Pat

2024

ECS J. Solid State Sci. Technol.

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“…144 Particularly, according to recent studies, ultrathin ALD oxides have been successfully used in short-channel TFTs. 158,174,179,[183][184][185]180 Chand et al 158 investigated ultrashort-channel ZnO TFTs with a channel length of 8 nm and an extremely scaled channel thickness of 3 nm. Their research yielded remarkably superior TFT device performance, which is elaborately detailed in Table 8.…”

Section: Semiconductor Tftsmentioning

confidence: 99%

“…Particularly, according to recent studies, ultrathin ALD oxides have been successfully used in short-channel TFTs. ,,,− , Chand et al . investigated ultrashort-channel ZnO TFTs with a channel length of 8 nm and an extremely scaled channel thickness of 3 nm.…”

Section: Electrical Properties Of Oxide Semiconductor Tftsmentioning

confidence: 99%

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

Choi,

Lim,

Shin

et al. 2024

Chem. Mater.

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Dynamic random-access memory (DRAM) devices are essential volatile memory components in most digital devices. With the increasing demand for further low-power and high-density devices, the planar structure of DRAM devices encountered a "memory wall", ushering in an era of 3D DRAM architecture. InGaZnO-based thin-film transistors (IGZO TFTs) have a very low off current (<10 −22 A/μm), representing a solution for new channel materials for next-generation 3D DRAM devices. IGZO TFTs are back-end-of-line (BEOL)compatible, enabling them to move the DRAM peripheral circuitry under the memory array and integrate stacked DRAM cells. IGZO thin films have been widely studied for next-generation flat panel display applications. However, most studies have employed sputtering and solution-based systems, which hinder process compatibility in 3D DRAM devices with complex structures. Atomic layer deposition (ALD) is a viable alternative for solving these challenges. In this paper, we comprehensively review the reported Zn-, In-, Sn-, and Ga-based oxide semiconductors in terms of the ALD process (precursors, reactants, growth temperature, etc.), together with material properties such as purity, crystallinity, and electrical properties.

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“…Recently, Liang et al reported that the 40% Zn-incorporated In 2 O 3 (IZO) TFT exhibited a high μ FE of 53.6 cm 2 V −1 s −1 . 20) However, the effects of a Zn addition to In 2 O 3 on the electrical properties and crystal structure of IZO films, as well as on the TFT characteristics and reliability, have not been thoroughly understood.…”

Section: Introductionmentioning

confidence: 99%

High-mobility and high-reliability Zn-incorporated amorphous In₂O₃-based thin-film transistors

Wu,

Magari,

Ghediya

et al. 2024

Jpn. J. Appl. Phys.

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Polycrystalline indium oxide-based thin film transistors (In2O3 TFTs) have attracted considerable attention because of high field effect mobility (μFE ~100 cm2 V−1 s−1). However, In2O3 TFTs exhibit poor reliability owing to the adsorption and/or desorption of gas molecules at the grain boundaries. The incorporation of Zn suppresses the crystallization of In2O3. Herein, we systematically studied the effect of Zn incorporation into In2O3 TFTs. The crystallization of In2O3 was suppressed when the Zn concentration ranging from 25% to 68%. Amorphous IZO TFTs with 25% Zn exhibited the highest μFE of 41 cm2 V−1 s−1 and excellent reliability. In contrast, polycrystalline IZO TFTs showed a low μFE <12 cm2 V−1 s−1 due to the formation of grain boundaries, and poor reliability after positive gate bias, mostly due to electron trapping at the polycrystalline/insulator interface. These results render an approach to realize In2O3 TFTs that show reasonably high μFE and excellent reliability.

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Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Cited by 19 publications

References 31 publications

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In₂O₃:ZnO Thin Film

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In₂O₃:ZnO Thin Film

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

High-mobility and high-reliability Zn-incorporated amorphous In₂O₃-based thin-film transistors

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Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Cited by 19 publications

References 31 publications

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In2O3:ZnO Thin Film

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In2O3:ZnO Thin Film

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

Contact Info

Product

Resources

About

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In₂O₃:ZnO Thin Film

Investigation of Optical and Electric Properties of Post-Annealed Graphene: In₂O₃:ZnO Thin Film

High-mobility and high-reliability Zn-incorporated amorphous In₂O₃-based thin-film transistors