Electrical characteristics of UV photodetectors based on ZnO/diamond film structure

Multifunctional device based on ZnO:Fe nanostructured films with enhanced UV and ultra-fast ethanol vapour sensing

“…S1). The Au/ZnO contact is known to demonstrate Schottky properties [36][37][38], however in our case a linear behavior can be explained by bombardment of the ZnO nanostructured films with Au atoms during the DC magnetron sputtering [39]. This leads to the accumulation of oxygen vacancies in the near surface region of undoped and Fe-doped ZnO [40], which acts as donor and results in heavily doped layers near the surface region.…”

“…This leads to the accumulation of oxygen vacancies in the near surface region of undoped and Fe-doped ZnO [40], which acts as donor and results in heavily doped layers near the surface region. As a result, the height of the Schottky barrier is lowered [39,41]. Another important factor for the formation of Ohmic contacts could the presence of carbon, hydrocarbons and OH impurities onto the surface of ZnO and ZnO:Fe films due to exposure in ambient air before deposition of contacts (which will be further demonstrated in this work by XPS studies) [42], which can considerably decrease the rectifying properties of the Au/ZnO contact [42][43][44].…”

Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO

“…Diamond substrate is considered as another potential substrate suitable for ZnO-based heterostructure photodiodes, which might be sufficient for special applications [162]. Huang et al demonstrated a ZnO/diamond UV photodiode configured with highly c-plane oriented ZnO grown on freestanding diamond by hot filament chemical vapour deposition (HFCVD) [163].…”

Construction and Evaluation of High-Quality n-ZnO Nanorod/p-Diamond Heterojunctions

“…15 Diamond has a unique combination of distinctive physical and chemical properties, such as the highest hardness and thermal conductivity, excellent chemical inertness, wide bandgap of 5.5 eV, and high electron and hole mobilities, which make it a very promising candidate for high temperature and high power microelectronic device applications. 16 17 Thus far, diamond-based Schottky diodes 18 and field effect transistors 19 have been demonstrated.…”