Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing

Nieh, R.; Kang, Chang Seok; Cho, Hag–Ju; Onishi, K.; Choi, Rino; Krishnan, Siddarth; Han, Jeong Hee; Kim, Young‐Hee; Akbar, M.S.; Lee, J.C.

doi:10.1109/ted.2002.808531

Cited by 57 publications

(12 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These materials are used as gate dielectrics [30] temperature sensors in magnetic fields [31], corrosion resistance coatings [32] and decorative films (golden, gray and black tones) [33,34]. But these oxynitrides have been poorly explored for the inactivation of micro-organisms/bacteria.…”

Section: Introductionmentioning

confidence: 99%

ZrNO–Ag co-sputtered surfaces leading to E. coli inactivation under actinic light: Evidence for the oligodynamic effect

Rtimi

Pascu

Sanjinés

et al. 2013

Applied Catalysis B: Environmental

View full text Add to dashboard Cite

a b s t r a c tThis study reports visible light sensitive ZrNO and ZrNO-Ag polyester samples prepared by sputtering in an Ar/N 2 /O 2 atmosphere leading to Escherichia coli bacterial inactivation. The bacterial inactivation by ZrNO avoids the increasing environmental concern involving the fate of Ag-leaching of many disinfectants. The simultaneous co-sputtering of ZrNO and Ag 2 O enhanced the E. coli bacterial inactivation kinetics compared to the sequential sputtering of ZrNO and Ag. A reaction mechanism is suggested triggered by photoinduced interfacial charge transfer (IFCT) suggesting electron injection form the Ag 2 O cb to the ZrO 2cb . The sizes of the ZrO 2 and Ag nanoparticles in the co-sputtered ZrNO-Ag were 80-130 nm and 8-15 nm respectively as determined by high angular annular dark field (HAADF) microscopy. Evidence is presented by X-ray photoelectron spectroscopy (XPS) for the self-cleaning of the photocatalysts after bacterial inactivation. This enabled a stable catalyst reuse. The XPS experimental spectra of ZrNO and ZrNO-Ag were deconvoluted into their ZrN, ZrNO and ZrO 2 components. The amounts of Ag-ions released during bacterial inactivation were < 5 ppb/cm 2 and well below the Ag cytotoxic levels. Since no cytotoxicity was introduced during the bacterial inactivation process, the ZrNO-Ag disinfection proceeds through an oligodynamic effect.

show abstract

Section: Introductionmentioning

confidence: 99%

ZrNO–Ag co-sputtered surfaces leading to E. coli inactivation under actinic light: Evidence for the oligodynamic effect

Rtimi

Pascu

Sanjinés

et al. 2013

Applied Catalysis B: Environmental

View full text Add to dashboard Cite

show abstract

“…Nitrogen incorporation into the high-k film has been studied extensively for several years [53,54]. The appropriate concentration of nitrogen at the interface between the high-k film and the Si substrate improves the carrier mobility [53].…”

Section: Reactants For In Situ N Incorporationmentioning

confidence: 99%

“…This is in contradiction with the SiO 2 gate dielectric, suggesting that a high-k/interfacial layer/Si interface generally has a more defective nature, even in the presence of a SiO 2 -like interfacial layer. On the other hand, the high thermal budget, serious plasma damage and excessive nitrogen incorporation at the interface by these postdeposition nitridation technique result in mobility degradation and impaired reliability [53,54]. Nitrogen incorporation is usually performed with thermal or plasma annealing using NH 3 or N 2 O gas [55,56].…”

Section: Reactants For In Situ N Incorporationmentioning

confidence: 99%

Atomic Layer Deposition Process of Hf‐Based High‐ k Gate Dielectric Film on Si Substrate

Park

Cho

Jung

et al. 2012

High‐k Gate Dielectrics for CMOS Technology

View full text Add to dashboard Cite

Hf-based gate dielectrics with a metal gate have been implemented in the mass production of state-of-the-art complementary metal oxide semiconductor field effect transistors (CMOSFETs) because SiO 2 gate dielectrics have already reached their physical limit due to the high leakage current and reliability concerns [1]. With this radical change in the gate dielectric material, other related materials, such as gate metal and spacers, as well as integration processes have also undergone unprecedented innovation over the past decade. There are several other notable changes in characterizing the device properties, which are still highly important research areas in microelectronics and are discussed in other chapters of this book.Some of the critical issues and related material processing are closely related to the material properties of high-k dielectric films, which are determined largely by the processing conditions of thin films. Atomic layer deposition (ALD) has been the industry standard process of the high-k gate dielectrics as well as several related materials. The merits of ALD include accurate thickness control, low thermal budget, good uniformity, and conformality. The conformality has not been the critical requirement for conventional planar MOSFETs but its importance is increasing as the three-dimensional structures, e.g., FinFET, are gaining more focus. The low thermal budget is another merit of ALD compared to chemical vapor deposition (CVD), particularly the gate-last integration scheme.ALD of high-k oxide films proceeds by alternately exposing the substrates to precursor and oxygen source that undergo self-terminating reactions with each other on the substrate surface. The metal half-cycle of ALD involves exposure of the growth surface to a gas-phase Hf precursor. After a purge of the reactor, the substrate is exposed to the oxygen source, which is followed by a subsequent purge, resulting in the formation of HfO 2 films. The thickness of the HfO 2 films can be controlled by repeating this reaction cycle. The selection of Hf precursor and oxygen source strongly affects the physical and electrical properties of the ALD HfO 2 films. As the High-k Gate Dielectrics for CMOS Technology, First Edition. Edited by Gang He and Zhaoqi Sun. ALD depends more on the specific chemistry and reaction route, compared to CVD. As ALD has evolved rapidly over the past several decades (ALD was first suggested by Professor Suntola in the early 1980s. [2]), a wide range of chemistry has become available, including inorganic and organic precursors.This chapter examines the issues related to the ALD processes of HfO 2 -based dielectric materials. The topics include the film properties and interactions with the Si substrate depending on the types of Hf precursor and oxygen sources. Although some chemistry aspects of ALD process itself are discussed but not mainly focused in this chapter. This chapter shows that various structural, physicochemical, and electrical characteristics of dielectric films are closely related to the deta...

show abstract

“…[6][7][8][9][10] In particular, materials for the gate electrode in a metal-oxide-semiconductor field-effect transistor (MOSFET) need to have the appropriate work function as well as chemical and thermal stability with high-k materials such as HfO 2 and ZrO 2 . 11,13 In particular, since the carrier density of TaN x is a strong function of nitrogen content (ranging from low 10 23 to low 10 20 cm À3 as the films become nitrogen rich 14 ), TaN is an excellent candidate for the quantum metal layer in a quantum metal field effect transistor (QMFET). 4,11,12 The main reason for the variation in the work function is a change in nitrogen content of TaN x , usually associated with differences in the growth methods and conditions.…”

Section: Introductionmentioning

confidence: 99%

Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

Choi

Dubourdieu

Kellock

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Ferromagnetic and electrical properties in ferromagnetic semiconductor Ti 1 − x Co x O 2 − δ : Sb thin films grown by pulsed laser deposition J. Appl. Phys. 97, 10D326 (2005); 10.1063/1.1855455Electrical properties of Ta-doped SnO 2 thin films prepared by the metal-organic chemical-vapor deposition method Appl.Tantalum nitride (TaN x ) amorphous thin films with varying nitrogen content were grown on SiO 2 /Si using ionized physical vapor deposition. The composition of the films was examined by Rutherford back scattering spectrometry. The carrier density and the resistivity of TaN x films were measured by Hall effect and Van Der Pauw's method. TaN x thin films showed increased electrical resistivity and reduced carrier density as the amount of nitrogen was increased. By controlling the nitrogen content, the carrier density can be tuned within a large range of 10 19 -10 22 cm À3 for 3 and 15 nm thick TaN x films. The metallicity of the films was confirmed using ultraviolet photoemission spectroscopy. For 3 nm thick TaN x films, carrier densities of $10 21 cm À3 were obtained with the N 2 flow rate in the range of 10-15 sccm. Such films have potential application in a quantum metal field effect transistor.

show abstract

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing

Cited by 57 publications

References 14 publications

ZrNO–Ag co-sputtered surfaces leading to E. coli inactivation under actinic light: Evidence for the oligodynamic effect

ZrNO–Ag co-sputtered surfaces leading to E. coli inactivation under actinic light: Evidence for the oligodynamic effect

Atomic Layer Deposition Process of Hf‐Based High‐ k Gate Dielectric Film on Si Substrate

Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

Contact Info

Product

Resources

About