Electrical characterization and parameter extraction of organic thin film transistors using two dimensional numerical simulations

Quantitative Correlation between Carrier Mobility and Intermolecular Center-to-Center Distance in Organic Single Crystals

“…The I – V curves show Ohmic characteristics even under a large strain, suggesting that the mobility modulation in organic single-crystal nanowires was enabled over a wide range of strains without device failure. The measured carrier mobilities were not affected by device contact resistance according to our estimates of the contact resistances by the modified transfer length method (M-TLM), which is a typical method used for measuring the parasitic contact resistance in organic transistors. , The estimated contact resistance was negligible compared to the total device resistance, and the contact resistances under different strain conditions were comparable (Figure S4) despite the significant differences in mobility under the two strain conditions, indicating that the measured mobility was modulated mostly by the intrinsic properties of the organic materials. In addition, the current was restored to its initial value when the applied strain was removed, indicating that the mobility modulation is reversible and reproducible.…”

“…The measured carrier mobilities were not affected by device contact resistance according to our estimates of the contact resistances by the modified transfer length method (M-TLM), which is a typical method used for measuring the parasitic contact resistance in organic transistors. 45,46 The estimated contact resistance was negligible compared to the total device resistance, and the contact resistances under different strain conditions were comparable (Figure S4) despite the significant differences in mobility under the two strain conditions, indicating that the measured mobility was modulated mostly by the intrinsic properties of the organic materials. In addition, the current was restored to its initial value when the applied strain was removed, indicating that the mobility modulation is reversible and reproducible.…”

Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices

“…Following that, we conducted investigations to deeply understand how the doping affects the performance of (PEA) 2 SnI 4 FETs. First, we examined the influence of doping on contact resistance ( R C W ) in the devices through the transmission line method (TLM) ( Bhargava and Singh, 2014 ; Minari et al., 2006 ; Xu et al., 2010 ). As shown in Figure 3 F, the contact resistance for pristine devices is 9.6 × 10 4 Ω cm, and it is reduced to 1.2 × 10 4 Ω cm for the 5 mol % SnI 4 -doped devices.…”

Graphene BioFET sensors for SARS-CoV-2 detection: a multiscale simulation approach

“…In the 400 nm-long remaining region, a 3 nm thick lipid layer that hosts the receptor molecules is considered. Despite the importance of contact resistance in the context of 2DM-based FETs, [42][43][44][45][46] we have consider ohmic contacts focusing on the intrinsic physics of the sensor and how it is impacted by the molecule features. Simulations are carried out with 10 receptors uniformly distributed along the structure.…”