Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications

Sanchez, J.; Ramı́rez, D.; Ravelo, Sergio I.; Lopes, A.; Cardoso, Susana; Ferreira, Ricardo

doi:10.1109/tmag.2012.2196422

Cited by 34 publications

(13 citation statements)

References 14 publications

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“…By connecting the sensors in a bridge configuration, it is possible to reach high sensitivity (tens of mV/V/A) in comparatively wide linear ranges (few mT) [11,12], which can be useful particularly in industrial electronics applications [13]. Additionally, during the fabrication process, sensors can be easily connected in a series, which significantly improves their performance [14].…”

Section: Introductionmentioning

confidence: 99%

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Dąbek

Wiśniowski

Stobiecki

et al. 2016

Sensors

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As single tunneling magnetoresistive (TMR) sensor performance in modern high-speed applications is limited by breakdown voltage and saturation of the sensitivity, for higher voltage applications (i.e., compatible to 1.8 V, 3.3 V or 5 V standards) practically only a series connection can be applied. Thus, in this study we focused on sensitivity, 3 dB bandwidth and sensitivity-bandwidth product (SBP) dependence on the DC bias voltage in single and series-connected TMR sensors. We show that, below breakdown voltage, the strong bias influence on sensitivity and the 3 dB frequency of a single sensor results in higher SBP than in a series connection. However, the sensitivity saturation limits the single sensor SBP which, under 1 V, reaches the same level of 2000 MHz∙V/T as in a series connection. Above the single sensor breakdown voltage, linear sensitivity dependence on the bias and the constant 3 dB bandwidth of the series connection enable increasing its SBP up to nearly 10,000 MHz∙V/T under 5 V. Thus, although by tuning bias voltage it is possible to control the sensitivity-bandwidth product, the choice between the single TMR sensor and the series connection is crucial for the optimal performance in the high frequency range.

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Section: Introductionmentioning

confidence: 99%

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Dąbek

Wiśniowski

Stobiecki

et al. 2016

Sensors

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show abstract

“…The experimental results were processed as follows: first, each sensor was measured before and after irradiation process and secondly, each sensor upon irradiation is compared with the reference sensor (not irradiated). Table I shows the sensitivity, output offset voltage, hysteresis and input bridge resistance of the sensors before they were submitted to the irradiation process and the reference sensor that M a n u s c r i p t 12 technologies described in [1], [11] even with those TMR is justified because actual sensors were based on TMR stacks designed for another application, where the sensors are of large area and square in shape. For these geometries, the weakly pinned free layer provides an autolinearization scheme, more effective than magnetostatic energy balance caused by the shape anisotropy [12].…”

Section: Page 8 Of 48mentioning

confidence: 99%

Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors

Arias

Muñoz

Freitas

et al. 2015

Sensors and Actuators A: Physical

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“…Recently, high-precision tunneling magneto-resistance sensors (TMR) can combined with inertial sensors are widely used in GPS-aided navigators for the consumer market, geomagnetic signal measurements in space [1,2]. TMR sensors have the advantages of low power consumption, miniaturization, good stability, and easy integration with CMOS process [3][4][5]. So high-performance TMR sensors with an accuracy of sub-nT level occupy a large market share in inertial navigation, space microgravity measurement, platform stability control, and other fields.…”

Section: Introductionmentioning

confidence: 99%

Harmonic Distortion Optimization for Sigma-Delta Modulators Interface Circuit of TMR Sensors

Liu

2020

Sensors

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The tunneling magnetoresistance micro-sensors (TMR) developed by magnetic multilayer material has many advantages, such as high sensitivity, high frequency response, and good reliability. It is widely used in military and civil fields. This work presents a high-performance interface circuit for TMR sensors. Because of the nonlinearity of signal conversion between sensitive structure and interface circuit in feedback loop and forward path, large harmonic distortion occurs in output signal spectrum, which greatly leads to the reduction of SNDR (signal noise distortion rate). In this paper, we analyzed the main source of harmonic distortion in closed-loop detection circuit and establish an accurate harmonic distortion model in TMR micro-sensors system. Some factors are considered, including non-linear gain of operational amplifier unit, effective gain bandwidth, conversion speed, nonlinearity of analog transmission gate, and nonlinearity of polycrystalline capacitance in high-order sigma-delta system. We optimized the CMOS switch and first-stage integrator in the switched-capacitor circuit. The harmonic distortion parameter is optimally designed in the TMR sensors system, aiming at the mismatch of misalignment of front-end system, non-linearity of quantizer, non-linearity of capacitor, and non-linearity of analog switch. The digital output is attained by the interface circuit based on a low-noise front-end interface circuit and a third-order sigma-delta modulator. The digital interface circuit is implemented by 0.35μm CMOS (complementary metal oxide semiconductor) technology. The high-performance digital TMR sensors system is implemented by double chip integration and the active interface circuit area is about 3.2 × 2 mm. The TMR sensors system consumes 20 mW at a single 5 V supply voltage. The TMR sensors system can achieve a linearity of 0.3% at full scale range (±105 nT) and a resolution of 0.25 nT/Hz1/2(@1Hz).

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Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications

Cited by 34 publications

References 14 publications

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors

Harmonic Distortion Optimization for Sigma-Delta Modulators Interface Circuit of TMR Sensors

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