Electrical characterization of advanced MOSFETs towards analog and RF applications

Kilchytska, Valeriya; Makovejev, Sergej; Esfeh, Babak Kazemi; Nyssens, Lucas; Halder, Arka; Raskin, Jean‐Pierre; Flandre, Denis

doi:10.1109/laedc49063.2020.9073536

2020 IEEE Latin America Electron Devices Conference (LAEDC) 2020

DOI: 10.1109/laedc49063.2020.9073536

|View full text |Cite

Electrical characterization of advanced MOSFETs towards analog and RF applications

Valeriya Kilchytska

Sergej Makovejev

Babak Kazemi Esfeh

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 64 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

Kumar,

Mahajan,

Deswal

et al. 2024

Microsyst Technol

View full text Add to dashboard Cite

RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

Kumar,

Mahajan,

Deswal

et al. 2024

Microsyst Technol

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Electrical characterization of advanced MOSFETs towards analog and RF applications

Cited by 1 publication

References 64 publications

RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

Contact Info

Product

Resources

About