Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

Aydoğan, Ş.; Çınar, K.; Asıl, Hatice; Coşkun, C.; Türüt, A.

doi:10.1016/j.jallcom.2008.09.131

Cited by 180 publications

(85 citation statements)

References 32 publications

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“…33 Aydogan et al reported a value of 17.3 Â 10 13 cm À2 eV À1 for a ZnO thin film based Schottky diode. 34 Faraz et al reported a range of values of 3.74 Â 10 11 -7.98 Â 10 10 cm À2 eV À1 for ZnO NRbased Schottky diodes. 35 The energy of the interface states E ss with respect to the valence band at the surface of the ZnO NRs is given by 9,36 …”

Section: Resultsmentioning

confidence: 99%

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

Hussain

Soomro

Bano

et al. 2012

Journal of Applied Physics

109

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Schottky diodes with Au/ZnO nanorod (NR)/n-SiC configurations have been fabricated and their interface traps and electrical properties have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f), and conductance-frequency (G p /x-x) measurements. Detailed and systematic analysis of the frequency-dependent capacitance and conductance measurements was performed to extract the information about the interface trap states. The discrepancy between the high barrier height values obtained from the I-V and the C-V measurements was also analyzed. The higher capacitance at low frequencies was attributed to excess capacitance as a result of interface states in equilibrium in the ZnO that can follow the alternating current signal. The energy of the interface states (E ss ) with respect to the valence band at the ZnO NR surface was also calculated. The densities of interface states obtained from the conductance and capacitance methods agreed well with each other and this confirm that the observed capacitance and conductance are caused by the same physical processes, i.e., recombination-generation in the interface states. V C 2012 American Institute of Physics.

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Section: Resultsmentioning

confidence: 99%

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

Hussain

Soomro

Bano

et al. 2012

Journal of Applied Physics

109

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“…The capacitance increased slowly with decreasing reverse bias voltage, indicating that the width of the depletion layer varied with the applied bias voltage. The C-V curve also revealed an anomalous peak with increasing bias voltage, associated with the distribution of deep traps in the gap, the series resistance, and interface states [17,18]. The inset in Fig.…”

Section: Resultsmentioning

confidence: 87%

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Kim¹

2016

Transactions on Electrical and Electronic Materials

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Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

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“…The slope of region I is about 3.6, indicating that the forward biased current is TCLC controlled by exponential distribution of trap levels [9]. The region II with slope ≈ 3 indicates that at higher voltages the traps in the device approach the "trap-filled" limit [2,37]. In this region, the increase rate of current with voltage decreases.…”

Section: Resultsmentioning

confidence: 97%

“…The properties of metal/semiconductor (MS) contacts or organic/inorganic semiconductor structures are of great importance for the potential use in electronic and optoelectronic devices [1][2][3][4]. Heterojunctions and the Schottky diodes have been studied by many researchers using different organic semiconducting materials [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

2011

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The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by currentvoltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be 7.64 × 10 10 cm −2 eV −1 . The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.

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Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

Cited by 180 publications

References 32 publications

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

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