Electrical characterization of conductive and non-conductive barrier layers for Cu-metallization

Ahrens, Christian H.; Depta, D.; Schitthelm, F.; Wilhelm, S. Mark

doi:10.1016/0169-4332(95)00132-8

Cited by 17 publications

(8 citation statements)

References 13 publications

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“…Si 3 N 4 is a well-known diffusion barrier 9 and has been used to protect materials from semiconductor dopants 10 metals, 11 water, 12 and oxygen. Si 3 N 4 is a well-known diffusion barrier 9 and has been used to protect materials from semiconductor dopants 10 metals, 11 water, 12 and oxygen.…”

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confidence: 99%

Ammonia pretreatment for high-κ dielectric growth on silicon

Brewer

Zhang

et al. 2004

Applied Physics Letters

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confidence: 99%

Ammonia pretreatment for high-κ dielectric growth on silicon

Brewer

Zhang

et al. 2004

Applied Physics Letters

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“…Several methods are proposed to resolve this problem, by introducing an extra layer at the interface as a diffusion barrier and adhesion layer, such as Cu/Ti [8,9], Cu/Ta [10], Cu/Mn [11], or Cu/Mo [12,13]. However, the extra functional layer gives rise to a complex pattern process.…”

Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

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Abstract:The characteristics of Cu alloy (0.3 wt. % Cr, 0.2 wt. % Zr) thin film deposited by direct current (DC) magnetron sputtering deposition were investigated. The conductivity and adhesion of the Cu-0.3%Cr-0.2%Zr films were optimized by increasing the sputter power to 150 W and reducing the sputter pressure to 2 mTorr. With an annealing process (at 300 • C for 1 h in argon ambient atmosphere), the resistivity of the alloy film decreased from 4.80 to 2.96 µΩ·cm, and the adhesion classification increased from 2B to 4B on glass substrate. X-ray photoelectron spectroscopy (XPS) analysis showed that Cr aggregated toward the surface of the film and formed a self-protection layer in the annealing process. Transmission electron microscopy (TEM) indicated the aggregation and migration of Cr in the annealing process. A further X-ray diffraction (XRD) analysis showed that Cu 2 O appeared when the annealing temperature reached above 350 • C, which accounts for the increase of the resistivity. Based on Al 2 O 3 and SiO 2 substrate surfaces, the Cu-0.3%Cr-0.2%Zr film also showed high conductivity and adhesion, which has a potential in the application of Cu gate electrodes for thin film transistor (TFT).

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“…Metal ion diffusion through insulating films is facilitated by the presence of oxygen through an oxidation pathway, 7,8,20,21 and a higher level of surface oxidation may enhance Cu + ion injection into the barrier. Two possible factors, which may be B-B composition dependent, are BCN film oxidation upon ambient exposure and the variable bond lengths within the film.…”

Section: Resultsmentioning

confidence: 99%

“…[6][7][8][9][10][11] These TDDB studies combine thermal stress and positive bias on a metal-insulator-semiconductor ͑MIS͒ capacitor with a copper gate to provide driving forces for positive copper ions to diffuse into the dielectric film. [6][7][8][9][10][11] These TDDB studies combine thermal stress and positive bias on a metal-insulator-semiconductor ͑MIS͒ capacitor with a copper gate to provide driving forces for positive copper ions to diffuse into the dielectric film.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9][10][11] These TDDB studies combine thermal stress and positive bias on a metal-insulator-semiconductor ͑MIS͒ capacitor with a copper gate to provide driving forces for positive copper ions to diffuse into the dielectric film. 8 More recent studies looked at a-SiC x N y and a-SiC x barriers with k Ͻ 7. 7 Ahrens et al reached similar conclusions comparing the barrier properties of silicon dioxide and silicon nitride at 220°C.…”

Section: Introductionmentioning

confidence: 99%

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Copper diffusion barrier properties of CVD boron carbo-nitride

Engbrecht

Sun

Junker³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The copper diffusion barrier properties of amorphous boron carbo-nitride ͑BC x N y ͒ films were studied. The BC x N y films were deposited by chemical vapor deposition at 360°C and 1 Torr using dimethylamine borane with no reaction gas ͑BC 0.37 N 0.15 ͒, with NH 3 ͑BC 0.19 N 0.44 ͒, or with C 2 H 4 ͑BC 0.90 N 0.08 ͒; their dielectric constants were 4.1, 4.4, and 3.9, respectively. A SiC 0.76 N 0.44 film was used to benchmark the study. Barrier films were deposited on 7 nm thermal oxide/ n-type Si substrates. The leakage current for BC 0.90 N 0.08 , 1.1ϫ 10 −8 A/cm 2 at 0.5 MV/ cm, is the lowest of the three but it is larger than that of the benchmark SiC 0.76 N 0.44 film, 5.5ϫ 10 −9 A/cm 2 . Time dependent dielectric breakdown is used to test barrier time-to-failure of Cu-gate capacitors at 150°C and +2 to 5 MV/ cm. BC 0.90 N 0.80 displayed barrier performance comparable to SiC 0.76 N 0.44 and was noticeably better than BC 0.37 N 0.15 and BC 0.19 N 0.44 . Overall, BC x N y barriers are promising and are improved with lower boron content, fewer B-B bonds, and increased B-C bonds.

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Electrical characterization of conductive and non-conductive barrier layers for Cu-metallization

Cited by 17 publications

References 13 publications

Ammonia pretreatment for high-κ dielectric growth on silicon

Ammonia pretreatment for high-κ dielectric growth on silicon

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Copper diffusion barrier properties of CVD boron carbo-nitride

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