Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells With a ZnTe:Cu Back Contact

Li, Jian V.; Duenow, Joel N.; Kuciauskas, Darius; Kanevce, Ana; Dhere, R. G.; Young, Matthew R.; Levi, Dean H.

doi:10.1109/jphotov.2013.2257919

Cited by 29 publications

(12 citation statements)

References 19 publications

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“…1, solid lines) using methods such as deep level transient spectroscopy (DLTS), 7,8 photo-induced current transient spectroscopy (PICTS), 9 and admittance spectroscopy (AS). 10 Optical transitions (Fig. 1, dotted lines) have been observed with photoluminescence (PL) 9 as well as in this study.…”

supporting

confidence: 81%

The effect of copper on the sub-bandgap density of states of CdTe solar cells

Warren

Wolden

et al. 2015

Applied Physics Letters

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Two optical sub-bandgap transitions in CdTe thin-film solar cells have been identified using detailed transient photocapacitance and transient photocurrent spectroscopy measurements. A broad response centered at EV + 0.9 eV directly correlates with the quantity of Cu present in the absorber layer, while a second response at EV + 1.2 eV does not depend on Cu or Zn and may be an intrinsic defect. These results demonstrate the influence of Cu on the sub-bandgap density of states of CdTe, and they are critical to understanding, modeling, and improving its optoelectronic properties.

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supporting

confidence: 81%

The effect of copper on the sub-bandgap density of states of CdTe solar cells

Warren

Wolden

et al. 2015

Applied Physics Letters

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“…A thickness of about 70 nm of ZnTe:Cu back contact layer grown by PLD under room temperature was covered on the etched CdTe layer. After that, the completed ZnTe:Cu layer was activated in the chamber of the PLD instrument with the inflated N 2 pressure of *2910 4 Pa at 200°C for 50 mins, which was able to promote the element Cu to diffuse into the junction [17,18]. Finally, Au electrode (*130 nm) was sequentially carried out by vacuum thermal evaporation [16], and then the whole solar cells were divided into many small areas of *0.0707 cm 2 .…”

Section: Methodsmentioning

confidence: 99%

The study of CdSe thin film prepared by pulsed laser deposition for CdSe/CdTe solar cell

Bao

Yang

et al. 2016

J Mater Sci: Mater Electron

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Over the past few years, the studies of CdS/ CdTe solar cells have become the mainstream, which have achieved good performance of exceeding 20 %. Here, we prepare CdSe thin films by pulsed laser deposition (PLD) which is one of promising techniques to synthesize semiconductor thin films. In this paper, the optical and electrical properties as well as the crystal structure of CdSe thin films deposited under different temperatures are investigated. We find that the deposition rate adds firstly, and then decreases with the increase of substrate temperature. Transmittance spectrum suggests the absorption edges of CdSe thin films under the condition of high temperature move towards short wavelength. The band gaps of CdSe thin films are 1.948, 1.976, 2.013 and 1.978 eV at the deposition temperature of 150, 250, 350, 450°C, respectively. X-ray diffraction analysis indicates the formation of cubic phase with a strong (111) preferential orientation. The surface morphology of CdSe thin film and the crosssectional structure of CdSe/CdTe layer are also analyzed. Based on these studies, we further fabricate the CdSe (PLD)/CdTe solar cells that present excellent performance of response in the range of long wavelength over 900 nm and a good efficiency of near 10 % has been realized.

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“…Both C-V profiles have the U-shape characteristic of CdS/CdTe devices. 8 The differences in V OC and FF between the two ZnTe:Cu contacting processes could be due to differences in temperature profiles, which would alter Cu diffusion. For example, higher-temperature RTP annealing for very short times would yield a different diffusion profile than the longer duration of lower temperatures for the sputtered contact.…”

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confidence: 99%