Electrical characterization of Cu(In,Ga)Se 2 -solar cells by voltage dependent time-resolved photoluminescence

Maiberg, Matthias; Spindler, Conrad; Jarzembowski, Enrico; Scheer, Roland

doi:10.1016/j.tsf.2014.09.022

Cited by 25 publications

(16 citation statements)

References 7 publications

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“…[2,4,30,31,37] A more concerning observation is that no difference between PL decays measured on absorbers and measured on devices is characterized for kesterites, as seen in Figure 2 where measurements on absorbers and devices are distinguished, and also reported for high-efficiency kesterite devices/ absorbers [25] and devices/absorbers reported here (Section 2.2). These results illustrate that a straightforward recombination limited PL decay model is inapplicable for kesterites.…”

Section: Introductionmentioning

confidence: 77%

“…It is clear that TRPL measurements in the presence of an electric field, particularly on completed devices with a strong p-n junction, should result in a voltage-dependent reduction in the measured decay time relative to an absorber with flat energy bands, as shown for such measurements on chalcopyrites. [4,37] The described charge separation effect on the PL decay is illustrated by voltage-dependent TRPL measured on a CIGSe device, shown in Figure 6a. Here, we see a measured decay time on the device which is significantly shorter than that of the bare absorber.…”

Section: Voltage-dependent Trplmentioning

confidence: 97%

“…The separation of charges in an electric field depends on the strength of the electric field E(V), minority carrier mobility µ n , and competing recombination processes, following Equation (2) in low injection [4,37] q kT…”

Section: Voltage-dependent Trplmentioning

confidence: 99%

See 2 more Smart Citations

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

Hages

Redinger

Levcenko

et al. 2017

Advanced Energy Materials

127

150

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Time‐resolved photoluminescence (TRPL) is a powerful characterization technique to study carrier dynamics and quantify absorber quality in semiconductors. The minority carrier lifetime, which is critically important for high‐performance solar cells, is often derived from TRPL analysis. However, here it is shown that various nonideal absorber properties can dominate the TRPL signal making reliable extraction of the minority carrier lifetime not possible. Through high‐resolution intensity‐, temperature‐, voltage‐dependent, and spectrally resolved TRPL measurements on absorbers and devices it is shown that photoluminescence (PL) decay times for kesterite materials are dominated by minority carrier detrapping. Therefore, PL decay times do not correspond to the minority carrier lifetime for these materials. The lifetimes measured here are on the order of hundreds of picoseconds in contrast to the nanosecond lifetimes suggested by the decay curves. These results are supported with additional measurements, device simulation, and comparison with recombination limited PL decays measured on Cu(In,Ga)Se2. The kesterite material system is used as a case study to demonstrate the general analysis of TRPL data in the limit of various measurement conditions and nonideal absorber properties. The data indicate that the current bottleneck for kesterite solar cells is the minority carrier lifetime.

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Section: Introductionmentioning

confidence: 77%

Section: Voltage-dependent Trplmentioning

confidence: 97%

See 1 more Smart Citation

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

Hages

Redinger

Levcenko

et al. 2017

Advanced Energy Materials

127

150

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“…Again, such consequence will lead to the effective reduction of the recombination rates at the GBs. It should be noted that the grain boundary of Cu(InGa)Se 2 and Cu 2 ZnSnS 4 solar cell materials has broadening or band bending of the band gap, consequently leading to the suppression of the photogenerated charge carriers at the GBs [27][28][29]. Therefore, the benign characteristics of the GBs of perovskites observed from many experimental measurements could be originated from a favorable larger energy bandgap alignment at the GBs, even though the MAPbI x or PbI x formed at the GBs is defective and contains deep trap centers.…”

Section: Resultsmentioning

confidence: 99%

Chemically, spatially, and temporally resolved 2D mapping study for the role of grain interiors and grain boundaries of organic-inorganic lead halide perovskites

Namkoong

Jeong

Mamun

et al. 2016

Solar Energy Materials and Solar Cells

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a b s t r a c tGrain interiors (GIs) and grain boundaries (GBs) of perovskites have been investigated using chemically, spatially, and temporally resolved measurements. Two dimensional (2D) chemical mapping measurements revealed the GBs consisted of the non-stoichiometric PbI x or CH 3 NH 3 PbI x , that were characterized by an absence of chloride, an enriched oxygen concentration, and a high density of iodide vacancies. In addition, steady-state 2D photoluminescence showed the bandgap broadening at the GBs while 2D lifetime mapping measurement suggested that the GBs indeed contained deep defect centers. However, it is found that defective GBs in perovskite materials do not act as high recombination sites for photogenerated charge carriers due to the bandgap broadening of non-stoichiometric PbI x or CH 3 NH 3 PbI x perovskites at the GB that forms the potential barriers for photo-generated charge carriers toward the GBs. As a consequence, the photo-generated charge carriers adjacent to the GBs will be easily repelled by the GBs, resulting in a greater reduction of the recombination of photogenerated charge carriers. This is one possible reason for the high performance of CH 3 HN 3 PbI 3-x Cl x based solar cells.

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“…The increase of the decay time under forward bias condition in CIGS solar cell structure has also been reported by other groups. 32,33 As we have explained before, without applying external bias, photo-excited excess-carriers are separated by the electric-field in the junction due to built-in voltage. With the application of forward bias, the electric-field in the junction-region is reduced, and then carrier-separation becomes less effective resulting in the longer decay time.…”

Section: Aip Advances 6 035216 (2016)mentioning

confidence: 96%

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

et al. 2016

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A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

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Electrical characterization of Cu(In,Ga)Se 2 -solar cells by voltage dependent time-resolved photoluminescence

Cited by 25 publications

References 7 publications

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

Chemically, spatially, and temporally resolved 2D mapping study for the role of grain interiors and grain boundaries of organic-inorganic lead halide perovskites

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

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