Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

Coelho, Sergio M.M.; Auret, F.D.; Rensburg, P.J. Janse van; Nel, Jackie M.

doi:10.1063/1.4828999

Cited by 16 publications

(25 citation statements)

References 30 publications

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“…Electron beam exposure (EBE) of the samples was achieved by using a 10 kV source (MDC model e-Vap 10CVS) with samples placed 50 cm away from the metal crucible as earlier reported by Auret et al [1] and Coelho et al [2]. The samples were exposed to EBE conditions for 50 minutes from a heated tungsten source using a beam current of 100 mA and an acceleration voltage of 10 kV [2]. This current was not enough to evaporate tungsten, but would have been sufficient to evaporate most other metals.…”

Section: Methodsmentioning

confidence: 99%

“…SBDs were fabricated in two stages: nickel Schottky contacts, 0.6 mm in diameter and of thickness 100 Å were first deposited by resistive evaporation technique before being quickly transferred into the electron beam deposition chamber for exposure to the electron beam. Electron beam exposure (EBE) of the samples was achieved by using a 10 kV source (MDC model e-Vap 10CVS) with samples placed 50 cm away from the metal crucible as earlier reported by Auret et al [1] and Coelho et al [2]. The samples were exposed to EBE conditions for 50 minutes from a heated tungsten source using a beam current of 100 mA and an acceleration voltage of 10 kV [2].…”

Section: Methodsmentioning

confidence: 99%

“…Electron beam deposition is one of the popular techniques in the fabrication of ohmic and Schottky barrier contacts at high controllable rate. Auret et al [1] and Coelho et al [2] have reported that metallization procedures, including electron beam deposition (EBD), induced defects at and close to the metal-semiconductor junction [3]. These defects influence the performance of the devices and alter the contacts' Schottky barrier heights [4].…”

Section: Introductionmentioning

confidence: 99%

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Electrical Characterization of Defects Introduced in <i>n</i>-Type N-Doped 4H-SiC during Electron Beam Exposure

Omotoso

Meyer

Auret

et al. 2015

SSP

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Abstract. Deep level transient spectroscopy (DLTS) was used to characterize the defects introduced in n-type, N-doped, 4H-SiC while being exposed to electron beam evaporation conditions. This was done by heating a tungsten source using an electron beam current of 100 mA, which was not sufficient to evaporate tungsten. Two new defects were introduced during the exposure of 4H-SiC samples to electron beam deposition conditions (without metal deposition) after resistively evaporated nickel Schottky contacts. We established the identity of these defects by comparing their signatures to those of high energy particle irradiation induced defects of the same materials. The defect E 0.42 had acceptor-like behaviour and could be attributed to be a silicon or carbon vacancy. The E 0.71 had intrinsic nature and was linked to a carbon vacancy and/or carbon interstials.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical Characterization of Defects Introduced in <i>n</i>-Type N-Doped 4H-SiC during Electron Beam Exposure

Omotoso

Meyer

Auret

et al. 2015

SSP

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“…The epilayer was grown by chemical vapour deposition on the Si-face of the SiC substrate, which had a net doping density of 1×10 18 cm -3 and resistivity of 0.019 Ω-cm. The epilayer had a doping density of ~4×10 14 cm -3 .…”

Section: Methodsmentioning

confidence: 99%

“…It has been reported that metallization processes, such as electron-beam deposition and sputter deposition, introduce electrically active defects in measurable quantities at and close to M-S junction in conventional semiconductors such as Si, Ge and GaAs [15][16][17][18], and 6H-SiC [19]. The defects introduced influence the performance of devices and may alter the barrier height of metal-semiconductor contacts [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Omotoso

Meyer

Coelho

et al. 2016

Materials Science in Semiconductor Processing

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We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage and capacitance-voltage measurements showed deviations from ideality due to damage, but were still well suited to a DLTS study. We compared the electrical properties of six electrically active defects observed in EBD Schottky barrier diodes with those introduced in resistively evaporated material on the same material, as-grown, as well as after high energy electron irradiation (HEEI). We observed that EBD introduced two electrically active defects with energies E C -0.42 and E C -0.70 eV in the 4H-SiC at and near the interface with the tungsten. The defects introduced by EBD had properties similar to defect attributed to the silicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible for the increase in concentration of a defect attributed to nitrogen impurities (E C -0.10) as well as a defect linked to the carbon vacancy (E C -0.67). Annealing at 400 °C in Ar ambient removed these two defects introduced during the EBD.

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Experimental Observation of Intrinsic Localized Modes in Germanium

et al. 2015

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Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy plasma ions up to a depth of several thousand lattice units. The plasma ions have energies of 2-8 eV and therefore can deliver energies of the order of a few eV to the germanium atoms. The most abundant defect is identified as the E-center, a complex of the dopant antimony and a vacancy with and annealing energy of 1.3 eV as determined by our measurements. The inductively coupled plasma has a very low density and a very low flux of ions. This implies that the ion impacts are almost isolated both in time and at the surface of the semiconductor. We conclude that energy of the order of an eV is able to travel a large distance in germanium in a localized way and is delivered to the defects effectively. The most likely candidates are vibrational nonlinear wave packets known as intrinsic localized modes, which exist for a limited range of energies. This property is coherent with the fact that more energetic ions are less efficient at producing the annealing effect.

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Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

Abstract: Articles you may be interested in Electron and hole deep levels related to Sb-mediated Ge quantum dots embedded in n-type Si, studied by deep level transient spectroscopy Appl.

Cited by 16 publications

References 30 publications

Electrical Characterization of Defects Introduced in <i>n</i>-Type N-Doped 4H-SiC during Electron Beam Exposure

Electrical Characterization of Defects Introduced in <i>n</i>-Type N-Doped 4H-SiC during Electron Beam Exposure

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Experimental Observation of Intrinsic Localized Modes in Germanium

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