Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes

Mamor, M.; Auret, F.D.; Goodman, S. A.; Myburg, G.

doi:10.1063/1.120967

Cited by 25 publications

(20 citation statements)

References 18 publications

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“…In previous work [30] we have showed that increasing the Ge content led to a decrease in the activation energy of the defect He2 and this decrease followed the same trend as the band-gap variation, suggesting that this defect detected in p-Si 1-x Ge x is the same as that observed in p-Si.…”

Section: B Electrical Characterizationmentioning

confidence: 70%

Defect production in strained p-type Si1−xGex by Er implantation

Mamor

Pipeleers

Auret

et al. 2011

Journal of Applied Physics

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Strained p-Si 1-x Ge x (x = 5.3%, 10.2% and 15.4%) was irradiated at room temperature with 160 keV 166 Er 2+ ions to a fluence of 1×10 10 or 3×10 13 Er/cm 2 . The defects induced by ion implantation were investigated experimentally using high-resolution X-ray diffraction, Rutherford backscattering and channeling spectroscopy and deep level transient spectroscopy. X-ray diffraction indicates that the damage induced by Er implantation produces a slight perpendicular expansion of the SiGe lattice. For all compositions, channeling measurements reveal that Er implantation in pSi 1-x Ge x to a fluence of 3×10 13 Er/cm 2 induces an amorphous region below the Si 1-x Ge x surface.Annealing at 850°C for 30 s, results in a reduction in damage density, a relaxation of the implantation-induced perpendicular expansion of the SiGe lattice in the implanted region, while a more pronounced relaxation of the compressive strain SiGe is observed for higher Ge content (x = 0.10 and 0.15). On the other hand, for the annealed SiGe samples that were implanted with Er at the fluence of 10 10 Er/cm 2 , the compressive strain in the SiGe layer is nearly completely retained. Deep level transient spectroscopy studies indicate that two prominent defects with discrete energy levels above the valence band are introduced during Er implantation. Their activation energy was found to decrease with increasing Ge-content. However, the large local strain induced by high fluence Er implantation reduces the activation energy by 40 meV with respect to the low fluence Er implanted p-Si 1-x Ge x . This shift (40 meV) in the activation energy remains constant regardless of the Ge content, suggesting that the Si 1-x Ge x layers remained fully strained after Er implantation. The observed defects are further compared to those introduced by alpha particle irradiation and electron beam metal deposition. The results indicate that defects introduced by Er implantation have similar electronic properties as those of defects detected after electron beam deposition and alpha particle irradiation. Therefore, it is concluded that these defects are due to the Er implantation-induced damage and not to the Er species specifically.Electronic mail: mamor@squ.edu.om 2

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Section: B Electrical Characterizationmentioning

confidence: 70%

Defect production in strained p-type Si1−xGex by Er implantation

Mamor

Pipeleers

Auret

et al. 2011

Journal of Applied Physics

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“…2 E t and σ a were determined using the low-field conditions, V r = 0.3 V and V p = 0.3 V. The two defects HEr2 and HEr3 have similar signatures as He2 and He3 detected after EB deposition of metal [11], Hal5 and Hal6 observed after 5.4 MeV ␣-particle irradiation of the same materials [12]. created by Er implantation to those detected in the same material after high (5.4 MeV) energy ␣-irradiation [12] and electron beam metal deposition [11] demonstrates that these defects are not Er related but solely related to implantation induced damage and primary defects. HRXRD was performed to measure the strain relaxation and the lattice parameters of the annealed Er implanted Si 1−x Ge x layers, with the symmetric (0 0 4) reflection.…”

Section: Resultsmentioning

confidence: 99%

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

Mamor

Pipeleers

Auret

et al. 2003

Materials Science and Engineering: B

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“…In the literature, we have pointed out results obtained with metals such as Al, 12,13 Pd, [13][14][15][16][17][18][19] Pt, [14][15][16][17]20 Ir, 16,20 W, [21][22][23][24] Zr, 25,26 Ti, [24][25][26][27] Fe 16 and Sc. 28 In all the studies on p type, a common trend of the SBH (⌽ Bp ) has been observed: ⌽ Bp decreases with increasing the Ge content ͑x͒ in the Si 1Ϫx Ge x epilayer. The authors have mostly related this trend to the decrease of the band-gap energy E g and ͑or͒ to the valence band offsets (⌬E v ) at the hererojunction SiGe/Si.…”

Section: Introductionmentioning

confidence: 90%

Fermi level position at metal Si1−x−yGexCy interfaces

Aubry-Fortuna

Barthula

Tremblay

et al. 2001

Journal of Applied Physics

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In this work, we have investigated the Schottky barrier heights on n- and p-type Si1−x−yGexCy alloys with Zr, Ti, W, Ni and Pt as metals (ΦBn and ΦBp, respectively). Contacts on Si1−xGex alloys showed various behaviors depending on the metal work function Φm. For low-Φm metals (Zr, Ti), ΦBn increases with x, while ΦBp(x) decreases. For higher Φm metals (Pt), ΦBn strongly decreases with x. In the particular case of W (intermediate Φm value), ΦBp follows exactly the decrease of the SiGe band gap with x, while ΦBn remains constant. Nevertheless, whatever the metal, the reduction of the sum ΦBn+ΦBp gives the band-gap variation as a function of x, and the Fermi level is located at the same position for both n and p-type layers. A weaker effect of Φm on the Schottky barrier heights is observed compared to pure Si: the position of the Fermi level tends to remain in the range 0.60–0.65 eV below the conduction band, as soon as Ge is adding in Si. W contacts on Si1−x−yGexCy alloys evidenced the strong effect of C on ΦBn and ΦBp. The variations of ΦBn(y) or ΦBp(y) cannot be correlated to the band gap. In addition, the position of the Fermi level at the interface depends on the type of the alloy. Nevertheless, as in the case of the binary alloy SiGe, a weaker dependence on Φm compared to that observed for pure Si is shown. High values of the ideality factor with increasing the C content may evidence the presence of interfacial inhomogeneities, which could be correlated to C short range order. The present results have been compared to existing published results.

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Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes

Cited by 25 publications

References 18 publications

Defect production in strained p-type Si1−xGex by Er implantation

Defect production in strained p-type Si1−xGex by Er implantation

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

Fermi level position at metal Si1−x−yGexCy interfaces

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