Electrical characterization of flexible hafnium oxide capacitors on deformable softening polymer substrate

Rodriguez‐Lopez, Ovidio; Guerrero, Edgar; Polednik, Alexander; Duran-Martinez, Adriana C.; Garcia-Sandoval, Aldo; Voit, Walter; Gutiérrez-Heredia, Gerardo

doi:10.1016/j.mee.2021.111618

Cited by 14 publications

(7 citation statements)

References 45 publications

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“…Over the last two decades, hafnium oxide (HfO 2 ) has emerged as a central dielectric material for high κ dielectrics in the semiconductor industry due to its high dielectric permittivity (κ = 16–25), large band gap ( E g = 5.6–5.8 eV), and high thermal stability. − In addition, its high hardness, melting point, and refractive index (1.85–2.1), have made hafnium oxide a potential material for applications such as optical devices, − ferroelectric transistors and capacitors, transparent protective layers, and biomedical applications such as hard tissue replacement and surgical instruments. , Many of the above technologies require the fabrication of HfO 2 nanoscale structures. These are typically fabricated using conventional top-down approaches, based on photolithography, with high fabrication costs, low throughputs, and complex, EUV-based processes when pattern dimensions below 20 nm are needed. , …”

Section: Introductionmentioning

confidence: 99%

Rational Design and Fabrication of Block Copolymer Templated Hafnium Oxide Nanostructures

Cai,

Weisbord,

Caspi

et al. 2024

Chem. Mater.

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The ability to fabricate hafnium oxide (HfO 2 ) nanostructures is central to the performance of computation devices, non-volatile memories, capacitors, biosensors, and optical devices. Sequential infiltration synthesis (SIS) has emerged in recent years as a new platform for nanostructure fabrication via the growth of inorganic materials within polymer templates using vapor phase precursors. However, the SIS materials library is currently still limited. In this study, we expand the SIS library with the development of hafnium oxide SIS and demonstrate HfO x nanostructure fabrication via SIS within block copolymer (BCP) templates. Insights into the infiltration behavior of tetrakis(dimethylamino)hafnium (TDMAHf), the Hf precursor, in various homopolymers, were obtained by in situ quartz crystal microgravimetry (QCM) measurements. These insights guided us to judiciously choose BCP systems for HfO x nanofabrication, where polystyrene-block-poly(epoxyisoprene) (PS-b-EPI) and HfO x SIS at 95 °C showed exceptional selective growth of HfO x in the EPI domains. Density functional theory (DFT) calculations supported the experimental observation that TDMAHf exhibits higher reactivity with the EPI domain compared to the PS domain. Detailed investigation of the templated HfO x nanostructures using scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) further validates the presence and distribution of Hf and O elements, as well as two oxidation states of the oxide. Our work presents the first report of HfO x SIS in BCPs, providing a method for HfO x nanostructure fabrication with tuned morphology and precise control over the HfO x growth. Furthermore, it contributes to the growing SIS library and its new avenues for functional nanomaterials with customizable properties fabrication.

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Section: Introductionmentioning

confidence: 99%

Rational Design and Fabrication of Block Copolymer Templated Hafnium Oxide Nanostructures

Cai,

Weisbord,

Caspi

et al. 2024

Chem. Mater.

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“…Consequently, they have been widely used as substrates for neural interfaces and soft electronics. [14,[20][21][22] Implementing the proposed stimulation system on these polymers, not only flexible but also softening and conformable, offers an advantage over conventional rigid silicon technology. In terms of the TFT active material, we utilize amorphous-indium-galliumzinc-oxide (a-IGZO) due to its proven compatibility with thiolene/acrylate polymer substrates.…”

Section: Introductionmentioning

confidence: 99%

Flexible a‐IGZO TFT‐Based Circuit for Active Addressing in Neural Stimulation Electrode Arrays

Rodriguez‐Lopez,

Rocha‐Flores,

Maeng

et al. 2023

Adv Materials Technologies

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Neural interfaces have undergone significant advancements in recent decades, aiming for flexible, compact, and high‐density electrode arrays with a large number of channels. However, the scalability of these devices is often hindered by the number of wires needed to separately connect each electrode to external electronics. To address this limitation, thin‐film transistor (TFT)‐based electronic circuits offer a promising solution by enabling active addressing of stimulation electrodes and potentially increasing the channel count with fewer interconnections. This paper presents the integration of a circuit comprising two amorphous indium–gallium–zinc‐oxide (a‐IGZO) TFTs and a titanium nitride (TiN) electrode on a flexible polymer platform. This circuit precisely controls the electrode's On/Off states and the delivery of current for nerve stimulation. Characterization studies involving frequency and electrochemical analysis demonstrate the TFT‐based circuit's capability to operate at high frequencies, deliver biphasic stimulation pulses to the electrode, and store sufficient charge for effective neural stimulation. Moreover, the a‐IGZO TFTs exhibit remarkable stability during repeated gate voltage sweeps with minimal changes in electrical performance. This circuit has the potential to be extended to active‐matrix devices that enable electrode arrays with a high number of channels and enhanced spatial resolution, which is crucial for selective neural stimulation.

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“…Among them, hafnium oxide (HfO 2 ) is a versatile material suitable for the next generation of microelectronic devices due to its high dielectric constant (κ ∼ 20) in the monoclinic phase with a band gap of 5.7 eV, high thermodynamic stability, and energy barrier compared to SiO 2 . 18 HfO 2 NPs have been explored in various applications such as capacitors, 19 dielectric barriers, 20 and field effect transistors for sensor applications. 18,21 Furthermore, HfO 2 NPs can be synthesized by different methods such as precipitation, 22 hydrothermal, 23 and ultrasonication processes.…”

Section: Introductionmentioning

confidence: 99%

Buteinylated-hafnium oxide bionanoparticles for electrochemical sensing of wogonin

Krishnan,

Parandhaman,

Kanagaraj

et al. 2023

Nanoscale

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Electrical characterization of flexible hafnium oxide capacitors on deformable softening polymer substrate

Cited by 14 publications

References 45 publications

Rational Design and Fabrication of Block Copolymer Templated Hafnium Oxide Nanostructures

Rational Design and Fabrication of Block Copolymer Templated Hafnium Oxide Nanostructures

Flexible a‐IGZO TFT‐Based Circuit for Active Addressing in Neural Stimulation Electrode Arrays

Buteinylated-hafnium oxide bionanoparticles for electrochemical sensing of wogonin

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