Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Abstract

The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO2/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO2/NiCr and Al/Si+nanoPS+AgNPs/TiO2/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices.

Fabrication of Zinc Oxide and Nanostructured Porous Silicon Composite Micropatterns on Silicon

“…The growth of ZnO thin films on PSi surfaces results in a notable enhancement in the PL properties of the composite, as previously reported [15,17,18]. However, PSi has lower electrical conduction than Si, which leads to limited conduction through optoelectronic devices [19,20]. Thus, the objective of the present work is to combine PSi and ZnO thin films to enhance PL emission properties and at the same time preserve electrical conduction.…”

Facile, Real‐Time Identification of Blood Components with Self‐Powered Organic–Inorganic Heterostructure Photodetectors

“…(Figure S9, Supporting Information) The Nyquist plot provides interfacial resistance change, which is strongly related with carrier transport and charge separation at the junction. [ 26 ] The high frequency arc in the Nyquist plot is corresponded with charge transport resistance ( R tr ), while the low frequency arc is related with recombination resistance ( R rec ) in the p‐n junction and R s is the series resistance of electrodes. [ 27 ] The low R tr value is beneficial for carrier extraction while high R rec value is advantageous for the charge extraction in dark state.…”

Self-powered broadband hybrid organic–inorganic photodetectors based on PEDOT:PSS and silicon micro-nanostructures

“…a broad wavelength range. However, the reduction of the overall reflectance is accompanied by a decrease of electrical conductivity associated to a higher porosity and a higher oxidation degree [26,27] . As such, the combination of silicon and PSi on the active layer can be an ideal strategy to combine in the same device the optical tunability of PSi and the high electrical conductivity of highly-doped Si.…”