Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004.
DOI: 10.1109/iccdcs.2004.1393377
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Electrical characterization of MOS capacitors with SiO/sub 2/-TiO/sub 2/ dielectric stack made by room temperature plasma oxidation

Abstract: In this paper, we present current-voltage characterization as function of temperature (IVT), of MOS capacitors with dielectric layers of SiO 2 , TiO 2 and with SiO 2 -TiO 2 dielectric stack, made by room temperature plasma oxidation. It is shown that in structures where only TiO 2 was grown, the main conduction mechanism is thermoionic emission. However, in this case, an interfacial layer was inevitably formed. This layer is probably a bad quality SiO 2 , with k<3.9 and thicker than expected, which reduces the… Show more

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