Electrical characterization of nitride silicon layers SiN:x enriched in silicon at different stoichiometry - photovoltaic application

Abstract

The main objective of researches in the field of photovoltaic is to increase the efficiency. This work aims a new concept which is the integration of nanoparticles in the anti-reflection layerSi3N4 (silicon nitride), in order to improve the performance of solar cells. This concept is based on the up conversion, where the nanoparticles are characterized by the ability to function as a converter of infrared rays having high energies in the receptivity in the visible. The concept of conversion leads to a better exploitation of the solar spectrum, by widening the useful range of the spectrum. Firstly, we realized SiNx layers at different compositions and proved that variation by calculating the silicon excess and the gap energy. But the focus is on the analysis of photocurrent measurements for the vertical and lateral configuration to show the role of nanparticules. And we finalize with measurement of currents at the test bench I-V to find the ideal stoichiometry for nanoparticles.

On a Moving Average with Internal Degrees of Freedom

“…In the modern world, when conducting experiments and measurements, data processing is of critical importance [1], [2], [3], [4]. To solve various problems, the data obtained as a result of measurements or calculations are grouped and further processed [5], [6], [7], [8]. One of these options is timeseries.…”