Electrical characterization of porous La-doped BaSnO3 using impedance spectroscopy

Abstract

A few compositions in the system Ba 1−x La x SnO 3 (x=0.00, 0.01, 0.05, and 0.10) have been synthesized via the solid state ceramic route. The synthesized powders have been characterized using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, Raman spectroscopy, Fourier transformation infrared, thermogravimetrical analysis, and differential thermal analysis techniques. The powder X-ray diffraction pattern of the samples confirms the formation of a single-phase solid solution only up to 0.50≤x. It was found that all the samples have a cubic crystal structure. The electrical properties of La-modified BaSnO 3 were studied using ac impedance spectroscopy technique over a wide range of temperatures (50-650°C) in the frequency range of 10 Hz-13 MHz. The complex impedance plots above 300°C show that total impedance is due to the contributions of grain and grain boundaries. The resistance of these contributions has been determined. Variation of these resistances with temperature shows the presence of two different regions with different slopes. The nature of the variation of conductivity of the grain and grain boundaries is different in different regions. Based on the value of activation energy, it is proposed that conduction via hopping of doubly ionized oxygen vacancies (V O •• ) is taking place in the temperature region of 300-450°C, whereas in the temperature region of 450-650°C, it is due to proton, i.e., OH • ions, hopping.

Studies on the structure, optical, ac conduction mechanism by OLPT model and impedance spectroscopy of La-doped Ba2SnO4 Ruddlesden Popper Oxide

“…The distance between the Sn-O and Ba-O were 2.05779 Å, 2.91015 Å respectively [46]. Also, a comparison between the dc conductivity of La-doped BaSnO3 and with present investigated samples at 600 o C has been made [29]. The BaSnO3 doped with La (1 %) had dc conductivity of 1.41 x 10 -4 S-cm -1 while B2LS1 had a dc conductivity of 1.26 x 10 -5 S-cm -1 .…”

“…BaSnO3 system [23][24][25][26][27][28][29][30]. Among the investigated papers, following are the investigations; K. K. James et al prepared the thin film of La-doped BaSnO3 at fused silica substrate using laser ablation, and found a progressive increase in conductivity up to 9 Scm -1 with incorporation of 7 at % La at Ba-site [27].…”

“…BaSnO3 system and studied their electrical properties using impedance spectroscopy and found their application as oxygen ion and hydroxyl ion conductor [29]. Masahiro et al synthesized the ceramics of La-doped BaSnO3 using polymerized complex method and reported it as ntype degenerate semiconductor [23].…”

Choice of hybrid functional and basis set optimization to calculate the structural, electronic, mechanical, and vibrational properties of BaSnO3

“…4a). The vibrational mode at ~633 cm −1 corresponds to stretching/compressing vibrations of the Sn-O bond along the x-, y-, and z-axes [9,14,[55][56][57][58][59] (Fig. 4c).…”

Cetyltriammonium Bromide Assisted Synthesis of Lanthanum Containing Barium Stannate Nanoparticles for Application in Dye Sensitized Solar Cells

“…The semiconducting properties of these materials have been engineered with the doping of cations viz., La, Si, Pb, Bi, and Te . To precisely realize the conduction mechanism, the complex impedance analysis at a specific temperature and frequency, distinctly for both grain and grain boundaries is of utmost importance …”