Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Abstract

The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition

“…Using a standard thermionic-emission (TE) model as the mathematic statement, the electrical characteristics of the diode can be computed (for qV > 3kT). The equation is as shown below [28,29,38,39]:…”

“…The high R s series resistance also affects the current transport mechanism of the hetero junction diode. In addition to the reasons such as accelerated recombination of electrons and holes in depletion region, the occurrence of lattice distortion and the presence of crystalline and amorphous regions could also lead to the higher ideality factor in hetero junction diode [23,25,29].…”

Advanced Strategies in Thin Films Engineering by Magnetron Sputtering

“…The electrical and structural properties of sputter-deposited p-Mg-In x Ga 1−x N/n-Si hetero-junction diodes and Al/SiO 2 /p-GaN MOS Schottky diodes are studied by Tuan et al [21,22] Electronic transport properties by means of Hall effect measurements are comprehensively performed. Holes concentration and mobility at room temperature are determined, as well as I-V and C-V measurements at different frequencies.…”

Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices

“…Xu and co-workers investigated the I-V-T characteristics of n-GaN/n-Si heterojunctions at different temperatures (18-400 K) and they reported an ideality factor of 10. 23 Recently, Tuan et al 24 studied the electrical properties of p-GaN/n-Si at a testing temperature of (300-450 K) and they estimated a Schottky barrier height in the range 0.5 to 0.62 eV. However, to the best of our knowledge, there is no report on the I-V-T characteristics of n-GaN/p-Si diodes in the absence of buffer layers.…”