Electrical characterization of silicon nitride interlayer-based MIS diode

Buyukbas-Ulusan, A.; Tataroğlu, A.

doi:10.1007/s10854-020-03533-1

Cited by 15 publications

(10 citation statements)

References 34 publications

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“…Indeed, the repeated electrical stress between the top Pt-Ti pad and the Si substrate makes the nitride barrier thinner, so that tunneling can occur, letting us model the Pt-Ti/Si 3 N 4 /Si structure as a stable MIS diode. [34,[45][46][47][48][49] Henceforth, we will refer to Pt-Ti/Si 3 N 4 /Si structure as the MIS diode and to CNT/Si 3 N 4 /Si structure as the MIS capacitor, while the parallel combination of the MIS diode and capacitor will be designated as the CNT-Si device.…”

Section: Methodsmentioning

confidence: 99%

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A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent

Pelella

Capista

Passacantando

et al. 2022

Adv Elect Materials

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A photodetector with bias‐tuneable current is realized by adding a film of single‐walled carbon nanotubes (CNT), forming a CNT/Si3N4/Si capacitor, to a prefabricated Pt–Ti/Si3N4/Si metal–insulator–semiconductor (MIS) diode. Electrical characterization of the entire device is performed to extract the temperature‐dependent ideality factor and Schottky barrier height in the framework of the thermionic emission theory. The CNT/Si3N4/Si capacitor increases the reverse current of the parallel Pt–Ti/Si3N4/Si MIS diode by adding a Fowler–Nordheim tunneling current at high reverse voltage bias. This feature endows the photodetector with two different photocurrent levels, photoresponsivity up to 370 mA W−1 and external quantum efficiency up to 50% at 950 nm wavelength. The device also shows a different photoresponse when light is focused on the CNT/Si3N4/Si region or around the Pt–Ti/Si3N4/Si structure. The photodetector can also be used as an optoelectronic Boolean logic device, in which the applied voltage bias and the incident light are the two input signals, and the photocurrent is the output. Furthermore, light generates a photocurrent at zero voltage and a photovoltage at zero current, making the device a self‐powered photodetector.

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Section: Methodsmentioning

confidence: 99%

“…Indeed, the repeated electrical stress between the top Pt–Ti pad and the Si substrate makes the nitride barrier thinner, so that tunneling can occur, letting us model the Pt–Ti/Si 3 N 4 /Si structure as a stable MIS diode. [ 34,45–49 ]…”

Section: Methodsmentioning

confidence: 99%

A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent

Pelella

Capista

Passacantando

et al. 2022

Adv Elect Materials

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“…Silicon nitride (Si 3 N 4 ) thin film has been prepared on Zn-doped p-type GaAs single crystal wafer to fabricate an Au/Si 3 N 4 /p-GaAs (MOS) capacitor by RF magnetron sputtering system. In our previous article [13], more information on fabrication processes was given. The interfacial Si 3 N 4 layer thickness was estimated to be about 175 Å from the oxide capacitance (C ox ) in the strong accumulation.…”

Section: Methodsmentioning

confidence: 99%

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Türkay

Tataroğlu

2021

J Mater Sci: Mater Electron

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RF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.

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“…In electrical characterization, the MIS structure has been used to investigate deeply on thin-film performance in the application of gate dielectric, MIS capacitors as well as MIS diode (Simeonov et al , 2007; Buyukbas-Ulusan and Tataroglu, 2020). In this study, we use the MIS structure to evaluate the effect of structural and surface morphology of AlN thin - films produced to the MIS diode characteristic.…”

Section: Resultsmentioning

confidence: 99%

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Azman

Nayan

Hasnan

et al. 2021

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PurposeThis study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique. Design/methodology/approachHiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100°Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method. FindingsThe XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35° compared to FWHM of AlN thin film deposited at room temperature at around 0.59°. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied. Originality/valueThe small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process.

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Electrical characterization of silicon nitride interlayer-based MIS diode

Cited by 15 publications

References 34 publications

A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent

A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

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