Electrical characterization of surface properties of the ATLAS17LS sensors after neutron, proton and gamma irradiation

Mikeštíková, M.; Kroll, J.; Abidi, S. H.; Affolder, A. A.; Allport, P. P.; Basso, M. J.; Bloch, I.; Casha, Albert Francis; Cindro, V.; Ciungu, B. M.; Dette, K.; Dey, S. S.; Doležal, Z.; Dudas, D.; Fadeyev, V.; Fernández-Tejero, J.; Fleta, C.; Gillberg, D.; Gunnell, J.; Hara, K.; Helling, C. M.; Hommels, Bart; Hunter, Alistair; Hunter, R. F.; Keller, J.; Kisliuk, D. P.; Klein, C.; Kodyš, P.; Koffas, T.; Kotek, Z.; Kvasnička, J; Latoňová, Věra; Mandić, I.; Marčišovský, M.; Martinez-McKinney, F.; Nicolini, J.O.; Onaru, Kyoji; Orr, R. S.; Peterkova, K.; Poley, L.; Pyatt, S.; Rossi, E.; Sato, Katsuya; Scharf, C.; Sharma, Saurabh; Staats, Ezekiel; Šťastný, J.; Thomas, J. P.; Ullán, M.; Unno, Y.; Wada, S.; Zahradnik, V.; Zatocilova, I.

doi:10.1016/j.nima.2020.164456

Cited by 10 publications

(11 citation statements)

References 14 publications

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“…T = -20±1 ᵒC RH < 35%* *RH during testing of W013_mini4 was ~55% These results also qualitatively agree with those presented in [21] where the same dependence of leakage current on fluence is observed. The magnitude of the leakage currents in Figure 5.2 are overall lower which is likely due to uncertainties in the dosimetry between the irradiation sites (there can be up to 20% error in the calculation of equivalent proton fluence), methodology between test sites, or a combination of the two.…”

Section: Current-voltage Response Of Irradiated Minissupporting

confidence: 91%

“…Finally, the discussions and evaluation of sensor properties in chapter five are completely original with the exception of MOS device theory presented in the final section of the chapter. The author has also contributed to several publications which present more results of QC testing of prototype sensors [26], a characterization of sensor surface properties after irradiation [21], a humidity sensitivity of sensors [31], and strip sensor module performance [30]. In these publications, the author's contributions may include QC and QA measurements directly made by the author (which are included in the publication).…”

Section: List Of Tablesmentioning

confidence: 99%

“…Damage to the surface oxide layer through ionizing radiation has been shown to negatively influence total leakage current (which increases with increasing fluence) and inter-strip resistance (which decreases with increasing fluence) [20], [21], [22]. There is also a minor increase in inter-strip capacitance with increasing radiation fluences for voltages below full depletion.…”

Section: Surface Damagementioning

confidence: 99%

“…The goal for the jig was to reach and maintain a temperature of −20 • C allowing results to be directly compared to sensor specifications (Table 3.1). Testing irradiated samples at low temperatures minimizes any annealing which is a statistically driven, temperature dependent phenomenon [21], [22], [29].…”

Section: Test Setup For Irradiated Minismentioning

confidence: 99%

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Electrical Characterization of Silicon Strip Sensors for the ATLAS ITk at the HL-LHC with Extended Investigations of Sensor Properties

Staats¹

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Silicon n + − in − p microstrip sensors have been developed for the ATLAS Inner Tracker (ITk). This is part of the phase-II upgrade programme for the High Luminosity Large Hadron Collider which will see a sevenfold increase in peak instantaneous luminosity. Prototype and preproduction generations of strip sensors are designed by the ITk Strip Sensor Collaboration and produced by Hamamatsu Photonics.The sensors undergo a variety of electrical and physical tests for Quality Control (QC) which are essential to verify compliance with specifications, monitor processing consistency, and predict the overall performance of the ITk. QC procedures are detailed and results from prototype sensors are given. A selection of results beyond the scope of QC are also presented. Topics include the effects of proton radiation, anomalous loss of strip isolation, and bias dependent changes in surface oxide charges. These studies are aimed at informing predictions of long term sensor performance.

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Section: Current-voltage Response Of Irradiated Minissupporting

confidence: 91%

Section: List Of Tablesmentioning

confidence: 99%

Section: Surface Damagementioning

confidence: 99%

Section: Test Setup For Irradiated Minismentioning

confidence: 99%

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Electrical Characterization of Silicon Strip Sensors for the ATLAS ITk at the HL-LHC with Extended Investigations of Sensor Properties

Staats¹

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“…The observable changes in the sensor characteristics caused by the bulk damage are shown to increase the leakage current linearly proportional to the fluence [5][6][7], to change the full depletion voltage with the fluence [5,8,9] and to decrease the charge collection efficiency [5,9]. The charges trapped in the SiO 2 layers and the defects in the Si-SiO 2 interface are shown to be responsible for the increase of the inter-strip capacitance [5,10], decrease of the inter-strip resistance [5,7] and increase of the flat-band voltage [5]. In conclusion, the results described above clearly indicate that post-irradiation performance of the prototype sensors satisfies ATLAS requirements.…”

Section: Pos(ichep2020)892mentioning

confidence: 99%

Radiation-Hard Silicon Strip Sensors for the ATLAS Phase-2 Upgrade

Latoňová¹

2021

Proceedings of 40th International Conference on High Energy Physics — PoS(ICHEP2020)

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The ATLAS upgrade for HL-LHC operation includes the installation of an entirely new all-silicon Inner Tracker (ITk). The silicon strip region comprises 165 m 2 of instrumented area, made possible by mass production of silicon strip sensors. This area is covered in a nearly hermetic way. Multiple sensor shapes are utilized: square sensors in the barrel part, and skewed trapezoidal sensors with curved edges to provide a continuous coverage of the disc surface in the endcap part of a detector. As a result, there are 8 different strip sensor types in the system. They all feature AC-coupled n +-in-p strips with polysilicon biasing, developed to withstand the total fluence of 1.6 • 10 15 n eq /cm 2 and the total ionizing dose of 66 Mrad. Following many years of R&D and 4 prototype submissions and evaluations, the project transitioned into pre-production, where 5 % of the total volume is produced in all 8 designs. In this contribution we will summarize the results obtained for the latest prototype sensors ATLAS17LS, a long-strip type sensor for the barrel part, the properties of which are expected to be comparable with the pre-production sensors.

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Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector

Fernández-Tejero

Bartl

Döcke

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker (ITk) for the High Luminosity Large Hadron Collider (HL-LHC). An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying Abstract ATLAS ITk specifications. The semiconductor manufacturing company Infineon Technologies AG was one of the two foundries, along with Hamamatsu Photonics KK, evaluated for the production of the new barrel silicon strip sensors for the ITk. This work presents the complete tests carried out on the sensors designed and fabricated in 6-inch wafers in the framework of the Market Survey. The full prototype wafer layout was designed using a Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. A complete characterization of the large area strip sensors fabricated is presented, including the results of proton and neutron irradiations, and their compliance with the specifications of the ITk strip tracker. This work is supported and financed in part by the Spanish Ministry of Science, Innovation and Universities through the Particle Physics National Program, ref. FPA2015-65652-C4-4-R (MICINN/FEDER, UE), and co-financed with FEDER funds. The authors also want to thank the participation of Infineon Technologies AG and the irradiation facilities CYRIC and IJS.

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Electrical characterization of surface properties of the ATLAS17LS sensors after neutron, proton and gamma irradiation

Cited by 10 publications

References 14 publications

Electrical Characterization of Silicon Strip Sensors for the ATLAS ITk at the HL-LHC with Extended Investigations of Sensor Properties

Electrical Characterization of Silicon Strip Sensors for the ATLAS ITk at the HL-LHC with Extended Investigations of Sensor Properties

Radiation-Hard Silicon Strip Sensors for the ATLAS Phase-2 Upgrade

Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector

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