Electrical Characterization of Thermal-Annealed Very Thin Barium-Doped Titanium Silicon Oxide Prepared by Liquid-Phase Deposition

Abstract

The electrical properties of very thin-barium doped titanium silicon oxide films grown on silicon by liquid-phase deposition were studied. The static dielectric constant is about 32 after thermal annealing in oxygen ambient at 600°C . The equivalent oxide thickness can reach 0.9nm with the leakage current density of 5×10−6A∕cm2 at 5MV∕cm . It has high potential for the future development of metal-oxide-semiconductor field-effect-transistors.