Electrical Characterization of Undoped, N- and P-Type Thermal Annealed PECVD SiC Films Deposited on Transparent Insulator Substrates

Abstract

Electrical characterization of undoped, n-and p-type doped, thermal annealed stoichiometric a-SiC:H films obtained in "silane starving plasma" condition by PECVD technique on transparent insulator substrates is presented. The electrical conductivity of the undoped SiC films demonstrates strong dependence on the increase of the structural order due to the thermal annealing process, which maximizes the heterogeneous Si-C bonds, providing larger spatial continuity for the electrical mobility by the crystallization process. The undoped 3C-SiC films show n-type conduction with conductivity, Hall mobility, and carrier concentration at room temperature of about 6.6×10 -3 (Ω.cm) -1 , 100 cm 2 /Vs, and 4×10 16 cm -3 , respectively. Different doping levels are exhibited for both, n-and p-type doping; highest conductivity values were obtained for doped samples with 5×10 20 cm -3 . In this case dark electrical conductivity values of 6.6×10 -1 (Ω.cm) -1 and 9.8 (Ω.cm) -1 for pand n-type doping, respectively, were observed.