Electrical Compact Modeling of Graphene Base Transistors

Abstract

Abstract:Following the recent development of the Graphene Base Transistor (GBT), a new electrical compact model for GBT devices is proposed. The transistor model includes the quantum capacitance model to obtain a self-consistent base potential. It also uses a versatile transfer current equation to be compatible with the different possible GBT configurations and it account for high injection conditions thanks to a transit time based charge model. Finally, the developed large signal model has been implemented in Verilog-A code and can be used for simulation in a standard circuit design environment such as Cadence or ADS. This model has been verified using advanced numerical simulation.

Two-Dimensional Electronics - Prospects and Challenges

“…This Special Issue comprises a total of 12 papers (four review papers and eight contributed articles) and spans a wide range of topics, which extend from first principle band structure calculations [14] and molecular dynamics simulations of the thermal properties [15] of 2D materials, over numerical simulations and compact modeling of 2D transistors [16][17][18] and other 2D devices [19,20], 2D material growth [21,22] and processing issues [22][23][24], up to experimental 2D devices and their applications [22,23,25]. Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25].…”

“…Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25]. Finally, the papers discuss More Moore electronics and transistors [16][17][18], as well as applications belonging to the More Than Moore domain of semiconductor electronics, including optoelectronics [22], RF electronics [16,23], sensors [20,25], and field emitters [19].…”

Two-Dimensional Electronics — Prospects and Challenges

“…Nanmeni Bondja and coworkers study the steady-state and RF performance of graphene nanoribbon transistors by numerical device simulations [16]. Finally, in the third transistor paper, Fregonese and coauthors describe a compact modeling approach for a novel graphene-based transistor type called graphene base transistor [17]. Finally, two papers discuss several aspects of the application of graphene in non-transistor devices.…”

“…Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25]. Finally, the papers discuss More Moore electronics and transistors [16][17][18], as well as applications belonging to the More Than Moore domain of semiconductor electronics, including optoelectronics [22], RF electronics [16,23], sensors [20,25], and field emitters [19].…”

“…This Special Issue comprises a total of 12 papers (four review papers and eight contributed articles) and spans a wide range of topics, which extend from first principle band structure calculations [14] and molecular dynamics simulations of the thermal properties [15] of 2D materials, over numerical simulations and compact modeling of 2D transistors [16][17][18] and other 2D devices [19,20], 2D material growth [21,22] and processing issues [22][23][24], up to experimental 2D devices and their applications [22,23,25]. Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25].…”