Electrical Compensation of Mechanical Stress Drift in Precision Analog Circuits

Motz, Mario; Ausserlechner, Udo

doi:10.1007/978-3-319-41670-0_16

Cited by 11 publications

(6 citation statements)

References 26 publications

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“…For applications without continuous rotation, such as windscreen wipers or throttle valve position sensors, or at start up (before a full revolution is completed), there is a limit to auto-calibration routines. In such cases we propose a stress compensation circuit similar to [35]: a smart angle sensor can measure the shear stress on its Vertical Hall devices. It estimates the change in sensitive direction of the Hall devices and accounts for it e.g.…”

Section: Practical Relevance Of Shear Stress Related Crosstalkmentioning

confidence: 99%

Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress

Ausserlechner

Holliber

Kollmitzer

et al. 2020

Solid-State Electronics

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Section: Practical Relevance Of Shear Stress Related Crosstalkmentioning

confidence: 99%

Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress

Ausserlechner

Holliber

Kollmitzer

et al. 2020

Solid-State Electronics

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“…This relation gets disturbed by deviations of the resistivity ρ owing to the piezoresistive effect: where Π⌣ represents the tensor of piezoresistive coefficients, and: where P ⌣ represents the tensor of piezo – Hall coefficients; ρ 0 and K 0 are the scalar resistivity and Hall coefficient, respectively, for the unstrained case (Husstedt et al , 2011). It is important to consider stress because it has a significant influence on the performance of integrated sensors (Motz and Ausserlechner, 2017).…”

Section: Modeling Of Random Deviationsmentioning

confidence: 99%

Optimal design of angular position sensors

Zangl

Faller

Granig

2017

COMPEL

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Purpose This paper aims to investigate the optimal placement and/or orientation of individual sensor elements within integrated angular position sensors, in particular magnetic sensors based on the Hall effect or magnetoresistive effects under consideration of random deviations (variations in the production process, environmental influences, noise) and correlations of these influences. Design/methodology/approach The authors utilize methods from optimal design of experiments to consider random deviations in a system-level model. In this sensor model, they include spatial dependencies of random deviations by means of a Gaussian random field. Based on this, an approach for fast determination of D-optimal designs is presented. Findings The results show that the intuitive and commonly used distributions of magnetic field sensors are actually optimal for the determination of in-phase and quadrature signals in the presence of spatial correlations, provided that the number of field sensors is higher or equal to three. However, in the uncorrelated case, the intuitive solutions are not the only optimal solutions or even not optimal at all. It is found that a restriction to symmetric designs is not necessary; thus, the design space can be extended to allow for further improvements, e.g. miniaturization, of such angular position sensors. Originality/value The proposed approach allows for the fast optimization based on a system model. Correlated random influences are considered by means of a Gaussian random field, which can be obtained either from measurements or from field simulations, e.g. using the finite element method. As this is done before the actual simulation, such evaluations are not needed during the optimization, which allows for very fast solution of the optimization problem. Therefore, the approach is well suited for application-dependent adjustment of sensor designs.

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“…In standard microelectronic packages the main part of the chip (except its perimeter) is under pure inplane biaxial stress in the order of 100 MPa [22]. Hence, this case is most relevant in practice.…”

Section: Devices With Mirror Symmetries To -And -Axes and Contacts Nomentioning

confidence: 99%

“…If one uses an isotropic biaxial stress state = (e.g., in a wafer bow experiment [53]) to characterize the piezo-Hall effect, the current related magnetic sensitivity does not depend on the piezoresistance effect. In smart silicon Hall sensors with mechanical stress compensation the piezoresistance effect leads to a − dependence of the magnetic sensitivity, whereas the piezoHall effect has a + dependence: this leads to increased complexity of the compensation circuit as described in chapter 16.6.3 in [22].…”

Section: Optimization Of Stress Sensor Devicesmentioning

confidence: 99%

“…Hence, the gyrator makes an essential difference between piezoresistance devices and Hall effect devices, and this already denies any perfect analogy between piezoresistance and Hall effect. In a conventional plastic encapsulated package the surface of a semiconductor chip is exposed to inplane mechanical stress [21,22]. For inplane normal stress , and inplane shear stress components on a (100) silicon chip it holds [23] = 0 (1 + 11 + 12 + 44 2…”

Section: Similarities Of Piezoresistance and Hall Effectmentioning

confidence: 99%

See 1 more Smart Citation

An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

Ausserlechner

2018

Advances in Condensed Matter Physics

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Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mechanical stress via the piezoresistance effect. Both effects are described by an anisotropic conductivity tensor with small offdiagonal elements. This has led other authors to the conclusion that there is some kind of analogy. In both cases the output voltage depends on the geometry of the device and the size of the contacts. For Hall plates this influence is accounted for by the Hall-geometry factor. The alleged analogy proposes that the Hall-geometry factor also applies to four-terminal stress transducers. This paper shows that the analogy holds only for a limited class of devices. Moreover, it is shown that devices of different geometries may have identical magnetic field sensitivity but different mechanical stress sensitivities. Thus, shape optimization makes sense for mechanical stress sensors. In extreme cases the output voltages of vertical Hall-effect devices may have notable magnetic field sensitivity but zero mechanical stress sensitivity. As byproduct, exact analytical formulae for the equivalent resistor circuit of rectangular and circular devices with two perpendicular mirror symmetries are given. They allow for an accurate description of how mechanical stress and deformation affect the output offset voltage and the magnetic sensitivity of Hall-effect devices.

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Electrical Compensation of Mechanical Stress Drift in Precision Analog Circuits

Cited by 11 publications

References 26 publications

Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress

Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress

Optimal design of angular position sensors

An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

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