Electrical conductance at initial stage in epitaxial growth of Pb, Ag, Au and In on modified Si(111) surface

Abstract

The electrical conductance and RHEED intensities as a function of the coverage have been measured during Pb depositions at 105 K on Si(111)-(6x6)Au with up to 4.2 ML of annealed Pb. The experiments show the strong influence of used substrates on the behavior of the conductance during the epitaxy of Pb atoms, especially for very initial stage of growth. Oscillations of the conductance during the layer-by-layer growth are correlated with RHEED intensity oscillations. The analysis of the conductance behavior is made according to the theory described by Trivedi and Aschcroft (Phys.Rev.B 38,12298 (1988)).

Growth of Au thin film on Cu-modified Si(111) surface

“…4). Similar minima have been observed during the growth of Pb, In, Ag and Au films on metallic surfaces [15]. These minima were explained by the presence of surface scattering centres (islands or isolated atoms), which block the current and degrade the 2D conductivity.…”

“…These minima were explained by the presence of surface scattering centres (islands or isolated atoms), which block the current and degrade the 2D conductivity. Note that a drop in conductivity at the initial stage of Au deposition was reported to be a feature of the Au/metal interface [15,16] as well as of Au thin films grown on Si(1 1 1)-Au surface reconstructions [17,18].…”

Ultrathin 2 nm gold as impedance-matched absorber for infrared light

“…As can be seen, Au layers below 1.5 nm show an unexpected reverse trend of the resistivity with increasing thickness. This effect has previously been observed for UTMFs below percolation and can be related to the growth of islands and isolated atoms, which act as additional scattering centers 51,52 (For more details see Supplementary Note 3). Compared to the bulk resistivity of Au with 2.2 × 10 −8 Ω•m, the 13 nm thick layer converges to a three times higher value.…”

Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

“…Typical values of hopping integrals are in the range of a few eV for strongly coupled atoms and smaller for weak couplings, see also other theoretical calculations, e.g. [43]. Moreover, the parameters were fitted to obtain satisfactory qualitative agreement with the experimental results.…”