Electrical conduction and breakdown properties of silicon nitride films

Mangalaraj, D.; Radhakrishnan, M.; Balasubramanian, C.

doi:10.1007/bf00752262

Cited by 5 publications

(3 citation statements)

References 34 publications

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“…The breakdown voltage V c is related to the dielectric strength for an ideal capacitor by V c = dE c , where d is the thickness of the dielectric. There have been many studies into dielectric strengths showing an inverse power law relation E c ∝ d −n [64][65][66][67][68][69][70]. The results show a typical range of values (0.5 − 1) for the scaling parameter n. Although decreasing the thickness will increase the dielectric strength this will not increase the breakdown voltage if the scaling parameter lies below one.…”

Section: Electrical Characteristics a Voltage Breakdown And Surface F...mentioning

confidence: 99%

Microfabricated ion traps

Hughes

Lekitsch

Broersma

et al. 2011

Contemporary Physics

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Ion traps offer the opportunity to study fundamental quantum systems with high level of accuracy highly decoupled from the environment. Individual atomic ions can be controlled and manipulated with electric fields, cooled to the ground state of motion with laser cooling and coherently manipulated using optical and microwave radiation. Microfabricated ion traps hold the advantage of allowing for smaller trap dimensions and better scalability towards large ion trap arrays also making them a vital ingredient for next generation quantum technologies. Here we provide an introduction into the principles and operation of microfabricated ion traps. We show an overview of material and electrical considerations which are vital for the design of such trap structures. We provide guidance in how to choose the appropriate fabrication design, consider different methods for the fabrication of microfabricated ion traps and discuss previously realized structures. We also discuss the phenomenon of anomalous heating of ions within ion traps, which becomes an important factor in the miniaturization of ion traps.

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Section: Electrical Characteristics a Voltage Breakdown And Surface F...mentioning

confidence: 99%

Microfabricated ion traps

Hughes

Lekitsch

Broersma

et al. 2011

Contemporary Physics

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“…The Poole-Frenkel charge transport model [4] can be used to describe a bulk limiting field enhanced thermal ionization of the trapped electrons (illustrated in Figure 6). In the model, J is the current density, E is the electric field, Φ B is the barrier height, ε is dynamic permittivity which equals to ε 0 ε D , ε D is dynamic dielectric constant, C 1 is a constant to be fitted.…”

Section: Conduction Mechanism Studymentioning

confidence: 99%

“…Popular dielectric thin films, like SiO 2 and Si 3 N 4 , are well understood and extensively used. It is known that primary charge transport mechanisms in these films are Fowler-Nordheim tunneling and Poole-Frenkel emission effects [3][4]. However, these films have limitations for MEMS, where harsh environment-resistant is needed because of exposure to release chemicals during fabrication and corrosive media during field use.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of Pecvd Silicon Carbide for Application in Mems Vapor Hf Sacrificial Release

Chen¹,

Lee²,

Regan³

et al. 2010

2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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This paper reports results from the characterization of dielectric properties and the electrical conduction mechanism in PECVD amorphous silicon carbide (a-SiC) films. We demonstrate that a-SiC is a good dielectric and passivation film for MEMS devices: (i) leakage current density is well acceptable under typical operating voltages (i.e., fields up to 3 MV/cm); and (ii) the films have super chemical inertness and corrosion resistance, can act as excellent etch stop/passivation layer for vapor HF sacrificial release in various type of transducer fabrication, compared to silicon nitride which has poorer selectivity and requires postcleaning to remove generated particles. This has large significance to the MEMS community.

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Capacitance–Voltage Measurements of (Bi_1–xSb_x)₂Te₃ Field Effect Devices

Wang

Schitko

Mußler

et al. 2019

Physica Status Solidi (b)

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Capacitance-voltage (C-V) traces in n-type-(Bi 1-x Sb x ) 2 Te 3 /oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (V tg ) from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. The results show the typical low-frequency and high frequency C-V traces, depending on measuring frequency, temperature, and illumination intensity and reflecting their sensitive dependence on recombination/generation rates. Superimposed a strong hysteresis under inversion is also observed which is ascribed to the presence of conventional localized surface states (LSS) which coexist with topological surface states (TSS).

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Electrical conduction and breakdown properties of silicon nitride films

Cited by 5 publications

References 34 publications

Microfabricated ion traps

Microfabricated ion traps

Electrical Characterization of Pecvd Silicon Carbide for Application in Mems Vapor Hf Sacrificial Release

Capacitance–Voltage Measurements of (Bi_1–xSb_x)₂Te₃ Field Effect Devices

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Electrical conduction and breakdown properties of silicon nitride films

Cited by 5 publications

References 34 publications

Microfabricated ion traps

Microfabricated ion traps

Electrical Characterization of Pecvd Silicon Carbide for Application in Mems Vapor Hf Sacrificial Release

Capacitance–Voltage Measurements of (Bi1–xSbx)2Te3 Field Effect Devices

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Capacitance–Voltage Measurements of (Bi_1–xSb_x)₂Te₃ Field Effect Devices