Electrical conduction at low temperatures in high energy silicon detectors before and after irradiation with neutrons

Croitoru, N.; Rancoita, P.G.; Rattaggi, M.; Rossi, G.; Сейдман, А.

doi:10.1016/0168-583x(96)00204-2

Cited by 12 publications

(7 citation statements)

References 27 publications

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“…Both results indicate potential applications of GCZ Si in space. On the other hand, from previous fundamental investigations of point defect properties in semiconductors, it is well-known that the study of the generation and annihilation of irradiation induced defects strongly contributes to a deeper understanding of intrinsic point defects and their interaction with other point defects, such as dopant or electrically inactive impurities [13,14]. Until now, few basic studies on the behavior under irradiation of Ge doped sili-con in general, and/or on actual diodes in particular, have been performed.…”

Section: Introductionmentioning

confidence: 99%

Electron irradiation induced defects in germanium‐doped Czochralski silicon substrates and diodes

Chen

Vanhellemont

Simoen

et al. 2010

Phys. Status Solidi (c)

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Ge doping in Czochralski silicon (Cz‐Si) crystal has been proposed as a successful application of the so‐called “impurity engineering” leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p‐on‐n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 1019 cm–3 Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Electron irradiation induced defects in germanium‐doped Czochralski silicon substrates and diodes

Chen

Vanhellemont

Simoen

et al. 2010

Phys. Status Solidi (c)

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“…a lower forward resistance. In addition [106,259], at 10 K the switching voltage V f,s 74 becomes ≈1.12 V, but for V f slightly above V f,s (at ≈1.14 V) the forward current increases less sharply (figure 15).…”

Section: -V Characteristics Down To Cryogenic Temperaturementioning

confidence: 99%

“…In these n-type extrinsic semiconductors, the freeze-out of dopants cannot be neglected below ≈38-35 K (e.g. [259], see also equations (4.21) and (4.22)); at 14-13 K the electron concentration is lower than ≈10 3 cm −3 and, as a consequence, the medium is practically an insulator. 69 E c − E d is 0.044-0.045 eV for phosphorus at room temperature in silicon (e.g.…”

Section: -V Characteristics Down To Cryogenic Temperaturementioning

confidence: 99%

“…Figure 15. Forward current (in A) as a function of the applied forward voltage (in V) for a nonirradiated n-type silicon detector ( [242], see also [106,259]) and temperatures from 10 up to 100 K.…”

Section: -V Characteristics Down To Cryogenic Temperaturementioning

confidence: 99%

“…[264,266]), the I -V forward characteristics are largely affected at very low temperatures (figure 16). At 10 K [259], for a neutron fluence of 1.2 × 10 13 n cm −2 , V f,s is about that before irradiation, 73 To determine T c , the capacitance measurements were performed with a test frequency of 10 kHz. 74 V f,s is average forward voltage for which the forward current increases abruptly from less than 10 −10 A up to more than 10 −8 A.…”

Section: -V Characteristics Down To Cryogenic Temperaturementioning

confidence: 99%

See 2 more Smart Citations

Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Atomic force microscopy investigation of dislocation structures and deformation characteristics in neutron-irradiated silicon detectors

Golan

Rabinovich

Inberg

et al. 2000

Microelectronics Journal

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Electrical conduction at low temperatures in high energy silicon detectors before and after irradiation with neutrons

Cited by 12 publications

References 27 publications

Electron irradiation induced defects in germanium‐doped Czochralski silicon substrates and diodes

Electron irradiation induced defects in germanium‐doped Czochralski silicon substrates and diodes

Particle interaction and displacement damage in silicon devices operated in radiation environments

Atomic force microscopy investigation of dislocation structures and deformation characteristics in neutron-irradiated silicon detectors

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