Electrical Conduction in Metals and Semiconductors

Kasap, S. O.; Koughia, Cyril; Ruda, Harry E.; Johanson, Robert E.

doi:10.1007/978-0-387-29185-7_2

Cited by 39 publications

(45 citation statements)

References 51 publications

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“…Here, nt is the density of tunneling carrier, rt the tunneling length (distance between grains), and τt the tunneling time. The effective (overall) complex conductivity, in a simple one-dimensional approximation [23][24][25], is given as [2,22]:…”

Section: Dynamics Of Free Carriers In Nanomaterialsmentioning

confidence: 99%

Dynamics of Carrier Transport in Nanoscale Materials: Origin of Non-Drude Behavior in the Terahertz Frequency Range

Shimakawa

Kasap

2016

Applied Sciences

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Abstract:It is known that deviation from the Drude law for free carriers is dramatic in most electronically conductive nanomaterials. We review recent studies of the conductivity of nanoscale materials at terahertz (THz) frequencies. We suggest that among a variety of theoretical formalisms, a model of series sequence of transport involving grains and grain boundaries provides a reasonable explanation of Lorentz-type resonance (non-Drude behavior) in nanomaterials. Of particular interest is why do free carriers exhibit a Lorentz-type resonance.

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Section: Dynamics Of Free Carriers In Nanomaterialsmentioning

confidence: 99%

Dynamics of Carrier Transport in Nanoscale Materials: Origin of Non-Drude Behavior in the Terahertz Frequency Range

Shimakawa

Kasap

2016

Applied Sciences

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“…Then the ρ(T) ~ T 3/2 dependence will be determined by the temperature dependence of the electron mobility due to acoustic phonon scattering [11]. The corresponding mobility can be written as…”

Section: Resultsmentioning

confidence: 99%

Low-temperature Minimum in the Electrical Resistivity of the Bi1.9Lu0.1Te3

Ivanov¹,

Yaprintsev²,

Lyubushkin³

et al. 2016

J. Nano- Electron. Phys.

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The temperature dependence of the specific electrical resistivity, ρ, of the Bi1.9Lu0.1Te3 alloy has been studied within the temperature 2 ÷ 230 K interval. Minimum in the resistivity was found at temperature Tm  11 K. This minimum is originated from a change of conductivity mechanism. Above Tm, the resistivity ρ increases as temperature increases. This behavior is due to the electron mobility decrease via an acoustic phonon scattering at heating. Below Tm, the variable-range hopping conductivity based on electron tunneling takes place. In this case, ρ increases as temperature decreases. Two electric field regimes of the hopping conductivity were observed in the resistivity versus electric field strength dependences.

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“…In order to fulfill both requirements, semiconductors that feature a single-carrier multiplication are needed. Unfortunately, the disparity between impact ionization coefficients for electrons and holes (so-called K-factor) is far from its ideal value for the majority of technologically-relevant semiconductors, such as Si [5], GaAs (Ref. 6, p. 320), InP [7].…”

Section: Introductionmentioning

confidence: 99%

First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors

Rubel

Izadi-Darbandi

2013

Journal of Applied Physics

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A critical requirement for high gain and low noise avalanche photodiodes is the single-carrier avalanche multiplication. We propose that the single-carrier avalanche multiplication can be achieved in materials with a limited width of the conduction or valence band resulting in a restriction of kinetic energy for one of the charge carriers. This feature is not common to the majority of technologically relevant semiconductors, but it is observed in chalcogenides, such as Selenium and compound I 2 -II-IV-VI 4 alloys.

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Electrical Conduction in Metals and Semiconductors

Cited by 39 publications

References 51 publications

Dynamics of Carrier Transport in Nanoscale Materials: Origin of Non-Drude Behavior in the Terahertz Frequency Range

Dynamics of Carrier Transport in Nanoscale Materials: Origin of Non-Drude Behavior in the Terahertz Frequency Range

Low-temperature Minimum in the Electrical Resistivity of the Bi1.9Lu0.1Te3

First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors

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