Electrical conduction mechanism of Zn:SiO_x resistance random access memory with supercritical CO₂ fluid process

Abstract

Articles you may be interested inIntrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

“…We suggest that the passivation of Si dangling bonds by S may lead to a reduction in the number of charge traps [34], improving the device performance. To determine whether the hopping conduction dominates the reverse-bias conduction behavior, analysis was conducted according to the log (I)-V relationship [38]. Figure 7 shows the reverse-bias current of the graphene/as-cleaned n-Si (graphene/sulfidetreated n-Si) device measured within a temperature range from 150 to 420 K. The leakage current is affected by sulfide treatment.…”

“…The log (I)-V curves are almost linear and the conduction current increases as the temperature increases, which indicates that the reverse-bias currents exhibit hopping conduction behavior. The hopping conduction can be expressed as [38][39][40] …”

Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices

“…Fig. 4 also shows the temperature-dependent I-V curves in the voltage range of 1.5-2.5 V for Au/CuAlO x /p + -Si devices at temperatures below 220 K. The log (I)-V curves are almost linear and I increases as T increases, which indicate that the currents exhibit hopping conduction behavior [27]. For hopping conduction, the conduction current increases with T, because thermally excited electrons hop from one trap state to another trap state in the CuAlO x layer.…”

“…The ln(I)-(1/T) curve is linear (Fig. 5), which indicates that hopping conduction is the dominant process [27]. The hopping conduction can be expressed as [7,[27][28][29]:…”

Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless Environment

“…Depending on the material group [3], device structure [4,5], and defect status [6,7], various switching behaviors can be observed. The switching mechanisms are typically classified as either a valence change effect [8], a thermochemical effect [2,9], or an electrochemical effect [10,11], whereby distinct surface effects can be attributed to various mechanisms [12,13].…”