Electrical conduction mechanisms of metal / high-T c superconductor (YBCO) interfaces

Lanosa, Leandro F.; Huhtinen, H.; Paturi, P.; Enrique, Carlos

doi:10.1088/1361-648x/ab6b8b

Cited by 5 publications

(7 citation statements)

References 48 publications

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“…2. As obtained previously for ceramics [20] and for thin films [21] metal/YBCO devices, our DUT exhibits a bipolar RS and hysteretical and non-linear IV characteristics.…”

Section: Methodssupporting

confidence: 84%

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YBCO-based non-volatile ReRAM tested in Low Earth Orbit

Enrique

Barella

Sanca

et al. 2020

J Mater Sci: Mater Electron

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An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical test started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling, and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.

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“…2. As obtained previously for ceramics [20] and for thin films [21] metal/YBCO devices, our DUT exhibits a bipolar RS and hysteretical and non-linear IV characteristics.…”

Section: Methodssupporting

confidence: 84%

“…"+" and "−" represent the Pt/ YBCO and the Au/YBCO interfaces, respectively. This more elaborated model was determined in previous studies performed on the very same interfaces [21,37,38].…”

Section: Resultsmentioning

confidence: 99%

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

Enrique

Barella

Sanca

et al. 2020

J Mater Sci: Mater Electron

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show abstract

“…2. As obtained previously for ceramics [20] and for thin films [21] metal/YBCO devices, our DUT exhibit a bipolar RS and hysteretical and non-linear IV characteristics. The counter-clockwise RHSL indicates that the "active" contact (ie the one that generates most of the resistance change) is, as expected, the ground Au contact, although a small change of the proper "+" device contacts is also observed (marked with circles in Fig.…”

Section: Methodssupporting

confidence: 84%

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

Acha,

Barella,

Sanca

et al. 2020

Preprint

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An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases.After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in spaceborne applications.

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“…interface of our DUT is in a different resistance level. Throughout previous studies carried out on the same interfaces [16,18,20,22], a detailed circuit model has been established, which is depicted in the upper inset of Fig. 2.…”

Section: A Electrical Characterizationsmentioning

confidence: 99%

“…Although being mostly known for its superconducting properties at T ≤ T c (≃ 90 K), YBa 2 Cu 3 O 7−δ (YBCO) has been widely used to study their resistive switching properties at room temperature for ReRAM memory applications [12][13][14][15][16]. What makes YBCO such an interesting material to build ReRAM devices is the possibility of modifying its oxygen content by applying moderate electric fields and thus producing large changes in its conductivity [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Proton irradiation effects on metal-YBCO interfaces

Acha,

Sanca,

Barella

et al. 2021

Preprint

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10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to ∼ 80•10 9 p/cm 2 no changes in the electrical behavior of the device were observed, while for a fluence of ∼ 300•10 9 p/cm 2 it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the γ power exponent parameter [γ = dLn(I)/dLn(V )] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

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Electrical conduction mechanisms of metal / high-T _c superconductor (YBCO) interfaces

Cited by 5 publications

References 48 publications

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

Proton irradiation effects on metal-YBCO interfaces

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