Electrical conductivity across InP and GaAs wafer-bonded structures with miscut substrates

Seal, Mark; Kay, Jeffrey Mc; Liao, Michael E.; Goorsky, Mark S.

doi:10.1109/pvsc.2015.7356150

Cited by 3 publications

(7 citation statements)

References 12 publications

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“…In subsequent publications, the role of relative miscut was shown to be important as well, with an increased difference in miscut between the two bonding faces leading to increased interface resistance. More recent results (5) showed that bonded n-InP/ n-InP, albeit at a higher doping concentration, led to reduced interface resistance (0.005 Ω⋅cm 2 ) compared to n-GaAs / n-GaAs. Interestingly, n-GaAs / n-InP interfaces showed interface resistances that were very similar to n-InP / n-InP and, therefore, much lower than n-GaAs / n-GaAs.…”

Section: Introductionmentioning

confidence: 98%

The Roles of Band Bending, Surface Misorientation, and Passivation on Electrical Transport Across III-V Bonded Structures

et al. 2016

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With results from bonding of several different materials combinations, surface orientations, and passivation treatments, as well as an assessment of barrier heights reported in the literature for transport in polycrystalline III-V materials as well as for other III-V bonded materials combinations, a general model has emerged. Lattice mismatch does not play a major role in limiting conductivity across an interface; however, misalignment (through twist or tilt) produces interfaces with increased resistance. Passivation techniques are most important for these systems which possess significant interface band-bending. The electrical characteristics of a grain boundary, whether in polcrystalline material or at a bonded interface, are determined by the presence of defect states and interfacial charge which create band bending and Fermi level pinning. The barrier heights and widths from zero bias conductance vs bias measurements over a wide range of temperatures and for different materials can be matched to band structure simulations of bonded semiconductor heterojunctions with resultant I-V curves showing good agreement between experiment and theory. Based on this study, which combines experimental results and transport modelling, it is expected that narrow bandgap III-V semiconductors should show lower barrier heights; but more importantly, modelling indicates that high doping at mismatched interfaces helps to significantly reduce the interface barrier height.

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Section: Introductionmentioning

confidence: 98%

The Roles of Band Bending, Surface Misorientation, and Passivation on Electrical Transport Across III-V Bonded Structures

et al. 2016

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“…Processing treatments could be efficiently optimized to obtain, for example, improved electronic transport properties under limited thermal budgets. Previous work has demonstrated bonding of III-V materials, to form both homojunctions and heterojunctions, by employing aqueous-sulfur (1)(2)(3) or elemental sulfur (1,4) passivation methods. However, a high-temperature anneal step is required to form a sufficiently strong bonded interface between the two materials.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Wafer-Bonded Oxide-Free Silicon with Surfaces Treated with an Ion-Bombardment Procedure

Liao

Flötgen

et al. 2018

ECS Trans.

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Oxide-free silicon surfaces were obtained using a high-vacuum wafer-bonding system by bombarding silicon wafer surfaces with argon ions. Wafers were subsequently bonded after the ion treatment. Both single wafers and bonded wafers were characterized. The results of argon ions with ion energies varying over one order of magnitude (from a factor of 0.5 to 5 of a baseline energy E0) are presented in this study. It is found that the resulting damage layer thickness increases with increasing ion energy but the layer density is ion-energy independent, which was about 80% of bulk crystalline silicon density. Annealing the bonded samples at 450 °C for short times reduces and for longer times, eliminates the damaged layer at the bonded interface.

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“…In this work, the effect of rotational misorientation (twist) on the electronic properties across the bonded interface was studied by fabricating InP homojunctions. This work in addition to our previous work on the effect of tilt misorientation (6) provides insight as to which crystallographic factors most strongly impact bonding and electronic transport across the interface. Furthermore, since the bonded interface is essentially a grain boundary, information obtained in wafer bonding experiments can also apply to polycrystalline systems where grain boundaries play a significant role in overall device performance.…”

Section: Introductionmentioning

confidence: 67%

“…To study the effect of rotation, on-axis (001) ± 0.1° n-type InP wafers with twist angles ranging from 0° to 90° in 15 increments were bonded. To study the role of relative tilt, (001) n-type GaAs and (001) n-type InP wafers with offcut angles of 4° towards <111>A and on-axis substrates were bonded to form relative tilts of 0°, 4°, and 8° (6). Currentvoltage (I-V) curves were measured at various temperatures ranging from 90 K to 340 K to determine the interfacial barrier heights using the Seager and Pike electron model (3,(6)(7)(8).…”

Section: Methodsmentioning

confidence: 99%

“…To study the role of relative tilt, (001) n-type GaAs and (001) n-type InP wafers with offcut angles of 4° towards <111>A and on-axis substrates were bonded to form relative tilts of 0°, 4°, and 8° (6). Currentvoltage (I-V) curves were measured at various temperatures ranging from 90 K to 340 K to determine the interfacial barrier heights using the Seager and Pike electron model (3,(6)(7)(8). Prior to bonding, the wafers were first cleaved into quarters and submerged in an NH4OH solution to remove the native surface oxide and then submerged in a 20% aqueous (NH4)2S solution for 5 minutes (1)(2)(3)6,8).…”

Section: Methodsmentioning

confidence: 99%

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The Role of Misorientation in Direct Wafer Bonded III-V Materials

et al. 2018

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Wafer bonding represents an important method to study the effects of wafer misorientation, both tilt and twist, on the properties of the bonded interface since both forms of misorientation can be controllably induced. Of particular interest in this study, the impact on electronic transport across the interface can be systematically studied for III-V materials systems. Both twist and tilt between bonded wafers is found to induce additional interfacial energy band bending that impedes electronic transport across the interface. The effect of rotational misalignment is found to exhibit a cyclic behavior, contrary to some studies reported in literature. The findings presented here suggest that crystallographic planar symmetry plays a role in influencing the bonded interface electrical properties.

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Electrical conductivity across InP and GaAs wafer-bonded structures with miscut substrates

Cited by 3 publications

References 12 publications

The Roles of Band Bending, Surface Misorientation, and Passivation on Electrical Transport Across III-V Bonded Structures

The Roles of Band Bending, Surface Misorientation, and Passivation on Electrical Transport Across III-V Bonded Structures

Characterization of Wafer-Bonded Oxide-Free Silicon with Surfaces Treated with an Ion-Bombardment Procedure

The Role of Misorientation in Direct Wafer Bonded III-V Materials

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