Electrical conductivity and dielectric characteristics of in situ prepared PVA/HgS nanocomposite films

Abdullah, Omed Gh.; Salman, Yahya A. K.; Saleem, Salwan A.

doi:10.1007/s10854-015-4196-4

Cited by 82 publications

(35 citation statements)

References 41 publications

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“…The existence of multiple diffraction peaks in the XRD pattern, confirms the polycrystalline nature of the CdO films [26] The mean grain size (G.S.) of the prepared samples was estimated from the full-width at the half-maximum (FWHM) of the highest intense peak at (222) plane, by using Debye-Scherrer formula [29,30]. The calculated values of grain size are given in Table 1.…”

Section: The Xrd Analysismentioning

confidence: 69%

Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique

2018

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Polycrystalline CdO:In 2 O 3 thin films for gas sensor applications were prepared on glass and silicon substrates by using one-step spray pyrolysis technique from the aqueous solution of CdCl 2 and InCl 3 at a substrate temperature of 300 °C. The structure, surface morphology, and the optoelectronic properties of prepared films were characterized respectively by means of X-ray diffraction (XRD), atomic force microscope and UV-visible spectroscopy. Based on the XRD results, the polycrystalline nature of CdO films has been confirmed, and In 2 O 3 films were found to exhibit a preferred orientation along (222) diffracted plane. The grain size varies between 9.0 and 28.4 nm. The results of Hall effect measurement of CdO:In 2 O 3 thin films confirms that all films were an n-type semiconductor. The electrical properties of prepared thin films and their sensitivity to nitrogen dioxide (NO 2) gas are also studied. The influence of the operating temperature and In 2 O 3 concentration on the NO 2 response were investigated. It is found that all films are sensitive to NO 2 gas, and the ideal operating temperature for the film contented 20 vol% of In 2 O 3 was found to be 200 °C at a gas concentration of 25 ppm. The sensing mechanism of the CdO:In 2 O 3 thin film is discussed and attributed to electron transfer between the sensing element and NO 2 molecules.

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Section: The Xrd Analysismentioning

confidence: 69%

Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique

2018

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“…Thus, the conditions of films obtaining were optimized. It was found that HgS films obtained in this way are not inferior in their characteristics to the same films, obtained by othermethods [9][10][11][12] and can be used in photosensitive applications.…”

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confidence: 63%

Optimization of synthesis conditions of HgS thin films

Sozanskyi¹,

Stadnik²,

Guminilovych³

et al. 2019

Visnyk Lviv Univ. Ser. Chem.

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The mercury sulfide (HgS) films were obtained on glass substrates via the chemical deposition method. The aqueous solutions of mercury(II) nitrate, thiourea and trisodium citrate were used. X-ray and elemental analysis of the film sample were made. The effect of concentrations of initial reagents, deposition duration and temperature on the mass of HgS coatings was investigated and their thickness were calculated. The optical and morphological properties of HgS coating were examined.The mercury sulfide (HgS) film is one of the least investigated material of zinc subgroup metal chalcogenides [1]. The HgS coatings have potential use in solid state solar cells, photoelectrochemical cells etc. The one of the simplest methods for semiconductor films obtaining is chemical deposition [2]. This method based on synthesis at low temperature (˂ 373 K) and duration from aqueous solutions, which consist of the metal salt, complexing agent, chalcogenizer and, if it's necessary, the pH-regulator. Previously, the anodic stripping voltammetry method was used for the optimization of these parameters for synthesis of zinc and cadmium chalcogenides semiconductor films [3][4][5]. The series of films samples had dissolved in hydrochloric acid, then the measurements of metal content were made. In the case of mercury, this is difficult to apply, so the optimization of chemical deposition of HgS films could be done by gravimetric measurements.Chemical deposition of HgS films was carried out on preliminarily cleaned square shape glass substrates with the total area of 64.8 сm 2 . The composition of the working solutions were follows: 0.0025-0.015 M of mercury(II) nitrate (Hg(NO3)2), 0.01-0.05 M of thiourea (NH2)2CS, as a complexing and chalcogenizing agent for Hg 2+ at the same time; and 0.015-0.021 M of trisodium citrate (Na3C6H5O7), as a pH regulator. The deposition was made in a glass bath during 0.5-7 minutes at a temperature of 323-363 K. After this, the substrates were removed, washed with distilled water and dried in the air. The films samples were dark-brown in color. Their adhesion to the glass substrate was weak. The films were easily removed at applying of small mechanical efforts.Experimental arrays of intensities and angles of reflection of the test samples were obtained on a DRON-3.0 X-ray diffractometer (CuKα-radiation). Preliminary processing of the experimental diffraction arrays in order to identify the phases were carried out using PowderCell program [6]. ____________________  Sozanskyi M.

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“…However, at high frequency, the dipoles will hardly be able to orient themselves. Therefore, the value of the dielectric constant decreases with increase in frequency . High permittivity at low frequency region is mainly due to the interfacial and space charge polarization .…”

Section: Resultsmentioning

confidence: 99%

Polydimethylsiloxane–PbZr_0.52Ti_0.48O₃ nanocomposites with high permittivity: Effect of poling and temperature on dielectric properties

Nayak

Khastgir

2018

J of Applied Polymer Sci

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Polydimethylsiloxane (PDMS)/lead zirconate titanate (PbZr0.52Ti0.48O3, PZT)‐based nanocomposites with high dielectric constant (permittivity, k) are prepared through room temperature mixing. The effect of PZT loading on electrical and mechanical properties of the PDMS–PZT composites is extensively studied. It is found that there is significant increase in permittivity with PZT loading and decrease in volume resistivity. All the composites have low dielectric loss compared to permittivity value. It is observed that there is increase in permittivity and decrease in volume resistivity of composites after poling, which is due to the dipolar polarization. It is found that both permittivity (ε′) and alternating current conductivity (σac) are increased with temperature at low frequency (1 Hz) and decreased with temperature at high frequency (1 MHz). The above composites are sensitive to external pressure and can be used as pressure/force sensor. The tensile strength and % elongation at break decreases with PZT loading, which is due to the nonreinforcing behavior of PZT ceramic. PZT particles distribution and dispersion in PDMS matrix are observed through field emission scanning electron microscopy, high resolution transmission electron microscopy, and atomic force microscopy/scanning probe microscopy. Thermal stability of composites increased with the PZT loading which is due to higher thermal stability of PZT particles compared to PDMS matrix. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 47307.

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Electrical conductivity and dielectric characteristics of in situ prepared PVA/HgS nanocomposite films

Cited by 82 publications

References 41 publications

Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique

Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique

Optimization of synthesis conditions of HgS thin films

Polydimethylsiloxane–PbZr_0.52Ti_0.48O₃ nanocomposites with high permittivity: Effect of poling and temperature on dielectric properties

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Electrical conductivity and dielectric characteristics of in situ prepared PVA/HgS nanocomposite films

Cited by 82 publications

References 41 publications

Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique

Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique

Optimization of synthesis conditions of HgS thin films

Polydimethylsiloxane–PbZr0.52Ti0.48O3 nanocomposites with high permittivity: Effect of poling and temperature on dielectric properties

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Polydimethylsiloxane–PbZr_0.52Ti_0.48O₃ nanocomposites with high permittivity: Effect of poling and temperature on dielectric properties