1965
DOI: 10.1007/bf01688694
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Electrical conductivity and thermoelectric power of heavily doped P-type CdSb

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Cited by 16 publications
(9 citation statements)
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“…At low temperature, the carrier mobility is almost independent with the temperature, displaying a neutral impurity scattering as the dominant scattering mechanism, while with further increase of the temperature, the carrier mobility decreases sharply following a T À3/2 dependence characteristic of acoustic phonon scattering as dominant scattering mechanism. The carrier mobility decreases with the increase of Sb content due to the enhanced alloying scattering [59]. It should be worth mentioning that despite that MS-SPS process refines the grain size, enhancing the grain boundary scattering, the carrier mobility of MS-SPS samples with the same Sb content is still comparable with that of TM sample.…”
Section: Resultsmentioning
confidence: 94%
“…At low temperature, the carrier mobility is almost independent with the temperature, displaying a neutral impurity scattering as the dominant scattering mechanism, while with further increase of the temperature, the carrier mobility decreases sharply following a T À3/2 dependence characteristic of acoustic phonon scattering as dominant scattering mechanism. The carrier mobility decreases with the increase of Sb content due to the enhanced alloying scattering [59]. It should be worth mentioning that despite that MS-SPS process refines the grain size, enhancing the grain boundary scattering, the carrier mobility of MS-SPS samples with the same Sb content is still comparable with that of TM sample.…”
Section: Resultsmentioning
confidence: 94%
“…Composition-dependent Hall carrier concentration for Cd 1– y Ag y Sb and Cd 0.99– x Zn x Ag 0.01 Sb (a), temperature-dependent Hall coefficient and Hall mobility (b), Hall carrier concentration-dependent Seebeck coefficient at different temperatures for CdSb materials (c) with a comparison to the literature results ,,,, and density of state effective mass ( m *) and deformation potential coefficient ( E def ) (d) for Cd 0.99– x Zn x Ag 0.01 Sb.…”
Section: Results and Discussionmentioning
confidence: 98%
“…More details of the SPB model can be found elsewhere . According to the literature band calculations, the degeneracy ( N v ) of the valence bands is 2 for both CdSb , and ZnSb; this enables the SPB model to understand the electronic transport properties more quantitatively. Temperature-dependent density-of-state effective mass ( m *) and deformation potential coefficient ( E def ) are shown in Figure d.…”
Section: Results and Discussionmentioning
confidence: 99%
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“…Light and dark shades of gray distinguish the band-gap value. Data are obtained from refs , and for details, see Table S1 in the Supporting Information (SI).…”
Section: Introductionmentioning
confidence: 99%