Electrical conductivity dependence of thin metallic films of Au and Pd as a top electrode in capacitor applications

Nazarpour, Soroush; Langenberg, Eric; Jambois, O.; Ferrater, C.; Garcı́a-Cuenca, M.V.; Polo, M.C.; Várela, M.

doi:10.1016/j.apsusc.2008.10.015

Cited by 7 publications

(9 citation statements)

References 18 publications

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“…Besides, the changes in the slop of the interface fracture force versus thickness curve could be demonstrated as a change at the interfacial bonding energy with increasing the thickness. Nazarpour et al [5] showed diffusion of the oxygen from STO through Pd thin film due to substrate relaxation process which could be correlated with interface fracture force curve. Fig.…”

Section: Resultsmentioning

confidence: 97%

“…High mobility materials such as pure FCC metals tend to have low intrinsic stresses when deposited at or near room temperature, but can support high extrinsic stresses [4]. Basically, residual stresses at the interface could be modulated by the substrate relaxation process [5]. In fact, the substrate relaxation process occurs due to lattice mismatch between the film and the substrate which their interfacial layer encompasses the variable lattice parameter from the lattice constant of the film to lattice constant of the substrate.…”

Section: Introductionmentioning

confidence: 99%

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Fracture force analysis at the interface of Pd and SrTiO3

Nazarpour

Zamani

Cirera

2009

Applied Surface Science

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Fracture force analysis at the interface of Pd and SrTiO3

Nazarpour

Zamani

Cirera

2009

Applied Surface Science

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“…Essentially, stress is induced by external factors during the application process, but it is also an intrinsic property which is already generated during film growth [9-11]. Based on our previous studies [1], the growth of Pd over STO follows the Stranski–Krastanow growth mode where 3D islands nucleate on top of a thin wetting layer. Besides, in the case of high melting temperature film, the ad-atom mobility is assumed to be quite limited, however, raising the deposition temperature from room temperature to 300 °C, transforms the growth mode from that of a low mobility metal to the high mobility ones.…”

Section: Discussionmentioning

confidence: 99%

Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

Nazarpour¹,

Afshar²,

Zamani³

et al. 2010

Nanoscale Res Lett

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Metal interconnections having a small cross-section and short length can be subjected to very large mass transport due to the passing of high current densities. As a result, nonlinear diffusion and electromigration effects which may result in device failure and electrical instabilities may be manifested. Various thicknesses of Pd were deposited over SrTiO3 substrate. Residual stress of the deposited film was evaluated by measuring the variation of d-spacing versus sin2ψ through conventional X-ray diffraction method. It has been found that the lattice misfit within film and substrate might be relaxed because of mass transport. Besides, the relation between residual intrinsic stress and oxygen diffusion through deposited film has been expressed. Consequently, appearance of oxide intermediate layer may adjust interfacial characteristics and suppress electrical conductivity by increasing electron scattering through metallic films.

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“…Graphite crucibles were used for resistive evaporation. The evaporation chamber was evacuated with mechanical and turbo molecular vacuum pumps until the base pressure of the chamber was 3.1×10 -7 torr [22][23]. Palladium was evaporated at 1.2 kV accelerating potential and 140 mA emission intensity.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Previously it has been shown [22] that thin Pd films transfer the morphology of the underneath layer or substrate toward the final surface. Hence, surface roughness of Pd films depends upon substrate roughness as well as deposition conditions.…”

Section: Oscillating Nanoindentationmentioning

confidence: 99%

Variation of adhesive force at the interface of Pd and SrTiO₃ as a consequence of residual stresses

Nazarpour¹,

Cirera²

2010

J. Phys. D: Appl. Phys.

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Initially, Pd thin films were deposited over a hard substrate using electron beam physical vapor deposition. The growth and the surface roughness of the films were analyzed and their effects upon conventional indentation test were discussed.Afterwards, an experimental method is described which can measure the critical fracture force in thin films using oscillating indentation. Initially, repetitive contacts at a single point with the purpose of identifying the fracture time provide the fracture force versus fracture time plot. Non-linear curve fitting of the data reveals the theoretical fracture force by a single indentation, which is called critical fracture force. Arguments are put forth to show the relation between piling up height and applied force. Discrepancies were observed in the plot of the ratio between total indentation depth and pilling up height versus applied force when higher loads than critical fracture force were applied.Discrepancies appear as a result of indenting the substrate. Nanoscratch test facilitated the possibility to measure adhesion strength and adhesion energy of the films considering measured critical fracture force as maximum applied force. The relation between residual compressive stresses, adhesion strength, plastic deformation, and pilling up area was discussed using dislocation theories. Indentation with high applied load leaves behind large plastic deformation and reduces the accuracy and reliability of the test results. Hence, lower loads (in the order of nN) were applied using Atomic Force Microscopy in the friction mode. Pulling off force was mapped in each thickness Confidential: not for distribution. Submitted to IOP Publishing for peer review 28 July 2010 of Pd films. The results confirm that the area around a hillock exhibits higher pulling off force due to the local stress relaxation as a consequence of hillock formation. By repeating the mapping process over different area with various applying forces, the plot of the pulling off force versus applied load was drawn representing discrepancies in the results at higher loads. This phenomenon is associated with the plastic deformation in the films.

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Electrical conductivity dependence of thin metallic films of Au and Pd as a top electrode in capacitor applications

Cited by 7 publications

References 18 publications

Fracture force analysis at the interface of Pd and SrTiO3

Fracture force analysis at the interface of Pd and SrTiO3

Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

Variation of adhesive force at the interface of Pd and SrTiO₃ as a consequence of residual stresses

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Electrical conductivity dependence of thin metallic films of Au and Pd as a top electrode in capacitor applications

Cited by 7 publications

References 18 publications

Fracture force analysis at the interface of Pd and SrTiO3

Fracture force analysis at the interface of Pd and SrTiO3

Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

Variation of adhesive force at the interface of Pd and SrTiO3 as a consequence of residual stresses

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Variation of adhesive force at the interface of Pd and SrTiO₃ as a consequence of residual stresses