Electrical conductivity enhancement in nanocrystalline (RE2O3)0.08(ZrO2)0.92 (RE=Sc, Y) thin films

Zhang, Y. W.; Jin, Shu; Yang, Yuehai; Li, G. B.; Tian, Shujian; Jia, Jun-Hua; Liao, Chun‐Sheng; Yan, Chun‐Hua

doi:10.1063/1.1328099

Cited by 67 publications

(32 citation statements)

References 19 publications

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“…Good-quality YSZ and CGO thin films have also been obtained by spin coating of polymeric precursors on various substrates. [21][22][23] These films with nanocrystalline structure showed a reduced activation energy and enhancement of conductivity with decreasing film thickness. Such high values could not be reproduced in films of comparable crystal structure obtained by PVD methods.…”

Section: Electrical Characterizationmentioning

confidence: 99%

Microstructures of CGO and YSZ Thin Films by Pulsed Laser Deposition

Infortuna¹,

Harvey²,

Gauckler³

2007

Adv Funct Materials

205

151

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Yttrium‐stabilized zirconia (YSZ) and cerium gadolinium oxide (CGO) thin films were prepared by pulsed laser deposition (PLD) under different ambient pressures and substrate temperatures. The microstructures of the obtained films are compared with existing structural zone models for thin‐film growth. The model developed by Thornton (1974) for metallic sputtered films is applied to the metal oxide films grown by PLD and gives a good description for the growth process and the dependence of the microstructure on deposition temperature and pressure. A map of formed microstructures is compiled as a function of background pressure and substrate temperature, and the conditions to obtain dense or porous films for YSZ and CGO are established. The two materials show the same dependence on temperature and pressure. Higher background pressure yields more porous films and a fully dense structure cannot be achieved for substrate temperatures in the range from room temperature to 800 °C. Of special interest for us was the realization and characterization of dense films processed at low temperature (< 500 °C) for the preparation of free‐standing membranes to be used in a micro solid oxide fuel cell. We could achieve such films by processing at 400 °C in 0.026 mbar of oxygen. In‐plane electric conductivities of the films were measured and correlated with the microstructures.

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Section: Electrical Characterizationmentioning

confidence: 99%

Microstructures of CGO and YSZ Thin Films by Pulsed Laser Deposition

Infortuna¹,

Harvey²,

Gauckler³

2007

Adv Funct Materials

205

151

View full text Add to dashboard Cite

show abstract

“…Especially, when employing micro-fabrication, the most considered substrate is silicon. Hence there are previous reports that used silicon base substrates to characterize thin film SOFC components by using in-plane electrode configurations [1,[17][18][19]. However, the effect of the substrate and/or buffer layer has not been thoroughly discussed.…”

Section: Introductionmentioning

confidence: 97%

“…In ref. [17], Zhang et al considered the higher conductivity value was sorely from the thin film, but Bieberle-Hütter et al [18,19] mentioned the possibility of electrical leakage through more conductive substrates, even with a 1 μm-thick dense buffer layer.…”

Section: Introductionmentioning

confidence: 98%

Substrate effect on the electrical properties of sputtered YSZ thin films for co-planar SOFC applications

et al. 2008

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The physical and electrical properties of sputtered YSZ thin films on various substrates were investigated. The in-plane electrical properties of the films were measured for evaluating YSZ thin film for co-planar SOFC electrolytes. The conductance measured on YSZ over Si substrates was significantly affected by the buffer layer thickness and exhibited higher values than that of YSZ on sapphire. This indicates that electrical leakage occurred through the substrate when Si substrates were utilized. Nevertheless, pure ionic conduction was observed in YSZ/ sapphire regardless of the film thickness. It implies that much care should be taken for the selection of substrate materials in measuring or utilizing in-plane conductivity, especially for high temperature applications.

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“…This means that the crystal structure, and hence properties, of the SSZ films are highly sensitive to the synthesis method and the thermal history [5]. An 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 4 enhancement in ionic conductivity was found in sol-gel derived nanocrystalline 8SSZ (8.0 mol% Sc 2 O 3 ) thin films, due to grain size effects [6,7]. In our previous work on magnetron-sputtered nc-YSZ, we observed a similar correlation between ionic conductivity and grain size [8].…”

Section: Introductionmentioning

confidence: 99%

Concentration-dependent ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline scandia-stabilized zirconia

et al. 2010

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Nanocrystalline (nc) scandia-stabilized zirconia (SSZ) electrolytes with scandia contents of 5.9 to 15.9 mol% were synthesized by reactive magnetron sputtering. For scandia content ≥ 9.1 mol%, the as-deposited films were pure cubic phase with <111> texture, while traces of tetragonal phase was found for lower Sc content. Single-line profile analysis of the 111 X-ray diffraction peak yielded an out-of-plane grain size of ~10 nm and a microstrain of 2.0-2.2%, regardless of scandia content, for films deposited at 400 °C and a bias of -70 V. Films deposited at higher bias voltages showed a reduced grain size, yielding a grain size of ~6 nm and a microstrain of ~2.5% at -200 V and -250 V with additional incorporation of argon. Temperature-dependent impedance spectroscopy of the SSZ films showed that the in-plane ionic conductivity had a maximum close to 10.7 mol% and decreased almost an order of magnitude as the scandia -content was increased to 15.9 mol%. The activation energy for oxygen ion migration was determined to be between 1.30 -1.43 eV. In addition, no 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 2 dependence on grain size was observed. The above observations suggest a bulk mechanism for ionic conduction. *Manuscript Click here to view linked References

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Electrical conductivity enhancement in nanocrystalline (RE2O3)0.08(ZrO2)0.92 (RE=Sc, Y) thin films

Cited by 67 publications

References 19 publications

Microstructures of CGO and YSZ Thin Films by Pulsed Laser Deposition

Microstructures of CGO and YSZ Thin Films by Pulsed Laser Deposition

Substrate effect on the electrical properties of sputtered YSZ thin films for co-planar SOFC applications

Concentration-dependent ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline scandia-stabilized zirconia

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