Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Ion irradiation effects on tungsten-oxide films and charge state effect on electronic erosion

“…Normal incidence or glancing incidence (40°to the surface normal) with the scattering angle of 160°are employed for RBS. The film thickness is 0.4-0.8 lm for WO 3 on W and 0.06-0.5 lm for WO 3 stopping power [12] and the WO 3 film density of 1.87 Â 10 22 W cm À3 (7.2 gcm À3 ) were employed. The enhancement factor of non-Rutherford cross section for 1.8 MeV H on O is determined to be 3.15, by utilizing TiO 2 single crystal.…”

“…[1][2][3][4][5]. At present, experimental data is poor to argue the difference of ion irradiation effects on between p-and n-type semiconductors and more data is desired.…”

High-energy ion irradiation effects on atomic structures and optical properties of copper oxide and electronic sputtering

“…Recently, modifications of electronic and atomic structures of zinc oxide (ZnO) and Al-doped ZnO by ion irradiation have been investigated [1][2][3]. Here ZnO is known as n-type transparent semiconductor (bandgap = 3.3 eV) with hexagonal-wurtzite crystal structure [4].…”

“…Here ZnO is known as n-type transparent semiconductor (bandgap = 3.3 eV) with hexagonal-wurtzite crystal structure [4]. A drastic increase has been observed in the electrical conductivity of Aldoped ZnO by ion impact [1,2] and discussions are given for relations between the conductivity increase and the modifications of the optical properties such as bandgap and atomic structure [3]. Also, the bandgap-dependence of the electronic sputtering or atomic displacement has been extensively studied [5].…”

Electrical property modifications of In-doped ZnO films by ion irradiation

“…It is understood that replacement of Zn on the lattice site by trivalent dopant (called dopant replacement) generates donor, resulting in the increase of the electrical conductivity. We have studied irradiation effects with low-and high-energy ions, where elastic and inelastic (electronic excitation) collisions are dominant, respectively, on the electrical property of Al-doped ZnO (AZO) films and found drastic increase of the conductivity [3,4]. The conductivity increase is ascribed to increase in the carrier density due to ion-induced Al-dopant replacement.…”