Electrical Conductivity Measurements on Cuprous Halides

Wagner, Jeff; Wagner, Carl

doi:10.1063/1.1743590

Cited by 595 publications

(234 citation statements)

References 16 publications

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“…This peculiar behaviour of observing both types of conductivity for the same sample may reflect an electrical instability in the Zn-doped CuCl samples. This may result from two competing conductivity mechanisms, namely electron conduction from the substitution of Cu by Zn and hole conduction due to the presence of Cu vacancies which are known to be present in undoped material [7] and may also be introduced due to excess chlorine from co-evaporation with ZnCl 2 . [8].…”

Section: Resultsmentioning

confidence: 99%

Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

O'Reilly

Mitra

Lucas

et al. 2007

J Mater Sci: Mater Electron

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The use of co-evaporation of ZnCl 2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of ±4V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n ~ 1 x 10 16 cm -3 and Hall mobility µ ~ 29 cm 2 v -1 s -1 for a CuCl sample doped with a nominal 3 mole % ZnCl 2 . By use of an in situ CaF 2 capping layer, transmission > 90% is achieved. At room temperature a strong Z 3 free excitonic emission occurs at ~385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.

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Section: Resultsmentioning

confidence: 99%

Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

O'Reilly

Mitra

Lucas

et al. 2007

J Mater Sci: Mater Electron

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“…The total electrical conductivity and the electron hole conductivity in copper halides have been reported by Wagner et al many years ago [6]. They reported p-type conductivity for the as deposited copper chloride films due to the presence of copper vacancies caused by the excess halogen.…”

Section: Introductionmentioning

confidence: 89%

Zn Doped Nanocrystalline CuCl Thin Films for Optoelectronic Applications

et al. 2010

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We report on the use of Zn as an n-type dopant in CuCl thin films for optoelectronic applications, wherein maximum n-type doping of the order of 10 18 cm -3 has been achieved. Zn doped nanocrystalline CuCl thin films are successfully deposited on glass and Si substrates by pulsed dc magnetron sputtering. Structural and morphological properties are investigated using X-ray diffraction (XRD) studies and Scanning Electron Microscopy (SEM), respectively. The conductivity of the CuCl:Zn films is examined using the four point probe technique. An order of magnitude increase in the conductivity of CuCl, by the doping with Zn is reported herein. The doped CuCl films display strong room temperature cathodoluminescence (CL) at ~ 385nm, which is similar to that of the undoped films. Hall Effect measurements show an n-type conductivity of the doped films.

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“…The transference number of the mobile species in the NPE film has been calculated by Wagner's dc-polarization method. 19 OCC of each electrolyte sample was sandwiched between two brass (blocking) electrode was polarized by applying a constant DC potential (1.5 V) through a potentiostat across the sample for about 3 h and the resulting current was monitored. Figure 6 shows the variation of polarization current as a function of time.…”

Section: 1c Ionic Transference Number Measurementmentioning

confidence: 99%

“…The activation energy was computed by temperature dependence conductivity curve. Ionic and electronic transference numbers (t ion and t ele ) were evaluated by means of Wagner's DC polarization technique, 18,19 degree of amorphosity by X-ray diffraction technique using a Philips PW 1710 diffractometer (using Cu-Kα radiation), surface morphology of the samples through SEM associated with EDS using JEOL JSM-5800 system. The thermal stability was studied by thermogravimetric analysis using TGA instruments (SDT 2960) and DSC (Perkin Elmer).…”

Section: Physical and Electrochemical Characterizationmentioning

confidence: 99%

PEO nanocomposite polymer electrolyte for solid state symmetric capacitors

Singh¹,

Verma

Minakshi

2015

Bull Mater Sci

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Abstract. Physical and electrochemical properties of polyethylene oxide (PEO)-based nanocomposite solid polymer electrolytes (NPEs) were investigated for symmetric capacitor applications. Nanosize fillers, i.e., Al 2 O 3 and SiO 2 incorporated polymer electrolyte exhibited higher ionic conductivity than those with filler-free composites. The composites have been synthesized by the completely dry (solution-free) hot-press method. The addition of filler in fractional amount to the solid polymer matrix at room temperature further enhances the ionic conductivity. Nature of the NPEs were studied using X-ray diffraction and energy-dispersive spectra analyses.

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Electrical Conductivity Measurements on Cuprous Halides

Abstract: The total electrical conductivity and the electron hole conductivity in solid CuCl, CuBr, and CuI between 250 and 450°C have been determined with help of ac measurements on samples between copper electrodes and dc polarization measurements on the cell Cu|cuprous halide|graphite.

Cited by 595 publications

References 16 publications

Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

Zn Doped Nanocrystalline CuCl Thin Films for Optoelectronic Applications

PEO nanocomposite polymer electrolyte for solid state symmetric capacitors

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