Electrical conductivity of C-SiC and Si-SiC prepared by spark plasma sintering

Taki, Yukina; Kitiwan, Mettaya; Katsui, Hirokazu; Goto, Takashi

doi:10.1016/j.matpr.2017.09.024

Cited by 11 publications

(22 citation statements)

References 10 publications

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“…Addition of elements in relatively pure form also affects the electrical resistivity of porous SiC. Elements are added to SiC mostly as a sintering aid; however, they can modify the electrical properties of SiC 72,131,143 . Metals are inherently conductive because they consist of abundant‐free electrons.…”

Section: Factors Affecting Electrical Resistivity Of Porous Sic Ceramicsmentioning

confidence: 99%

“…The sintering of porous SiC is widely carried out under N 2 , 25,26 Ar, 25,70 or vacuum atmospheres. 71,72 Among these different sintering atmospheres, N 2 is considered as the most efficient sintering atmosphere for decreasing the electrical resistivity of SiC. 29 N 2 is soluble in the SiC lattice, 73,74 which creates donor levels near the conduction band and reduces the electrical resistivity of SiC.…”

Section: Factors Affecting Electrical Resistivity Of Porous Sic Ceramicsmentioning

confidence: 99%

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Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Anwar

Bukhari

et al. 2022

Int J Applied Ceramic Tech

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Porous silicon carbide (SiC)‐based ceramics are widely used in numerous applications of technical importance owing to their exceptional structural (e.g., excellent chemical, mechanical, and thermal stability) and functional (e.g., controlled electrical resistivity) properties. Porous SiC with controlled electrical resistivity is required for various advanced applications, for example, power electronic devices, semiconductor processing parts, fusion reactors, thermoelectric energy conversion, electromagnetic shielding, and environmental applications such as heatable filters. The electrical properties of sintered porous SiC are significantly affected by its chemical composition, processing conditions, and microstructure. This article reviews the influence of certain critical factors, such as the polytype, doping conditions, porosity (%), additive composition (oxide additives, element additives, metal nitride/carbide additives, etc.), and processing conditions on the electrical resistivity of porous SiC. Novel applications of porous SiC with controlled electrical resistivity are also discussed in this review.

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Section: Factors Affecting Electrical Resistivity Of Porous Sic Ceramicsmentioning

confidence: 99%

Section: Factors Affecting Electrical Resistivity Of Porous Sic Ceramicsmentioning

confidence: 99%

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Anwar

Bukhari

et al. 2022

Int J Applied Ceramic Tech

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“…However, some large residual-defects (over 100 nm) composed of metallic silicon were observed, and its high-temperature strengths were problematic [6]. And SPS is not applicable to complicated shapes because of its high-pressure process, and also an existence of some residual pores was reported [7,8]. Furthermore, most present production processes of SiC-sintered body contain mechanical milling process such as a ball-mill in a preparation of the mixed raw-powders.…”

Section: Accepted Articlementioning

confidence: 99%

“…6 And SPS is not applicable to complicated shapes because of its high-pressure process, and also an existence of some residual pores was reported. 7,8 Furthermore, most present production processes of SiC sintered body contain mechanical milling process such as a ball-mill in a preparation of the mixed raw powders. The mechanical milling process requires relatively long preparation time and can the carbothermal reduction (SiO + 2C → SiC + CO and SiO 2 + 3C → SiC + 2CO) of the oxide phase and residual carbon contained in the raw Si-Al-C-O fiber and the subsequent sintering proceed inside each filament.…”

Section: Introductionmentioning

confidence: 99%

A new process for creating a solid‐phase sintered body using a unique densification process between powders

Ishikawa

Naito

2021

Int J Ceramic Engine & Sci

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SiC-polycrystalline fiber (Tyranno SA) had been developed using a conversion process from amorphous Si-Al-CO fiber to SiC-polycrystalline fiber via carbo-thermal reduction (~1700 o C) and sintering processes (~2000 o C). In the conversion process, the carbo-thermal reduction (SiO+2CSiC+CO and SiO 2 +3CSiC+2CO) of the oxide phase and residual carbon contained in the raw Si-Al-CO fiber and the subsequent sintering proceed inside each filament. Here, we describe a new densification process of SiC powder that optimally uses the conversion process from Si-Al-CO fiber to SiC-polycrystalline fiber. In this new process, we adopted the densification process, that occurred in each filament of the Si-Al-CO fiber, for the development of a dense SiC sintered body using partially oxidized SiC-powder with surface oxide layer and polymer-derived pyro-carbon containing a considerable quantity of aluminum as sintering aid for Accepted Article This article is protected by copyright. All rights reserved SiC crystals. Herein, the reactions and sintering, which occurred in each filament of Si-Al-CO fiber, proceeded in the interstices of SiC powder to create a dense SiC body. In this paper, we will describe the new densification system of SiC powder.

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“…However, some large residual‐defects (over 100 nm) composed of metallic silicon were observed; its lack of high‐temperature strength was also a challenge . On the other hand, the latter method (SPS) is not applicable to complicated shapes because of its high‐pressure process; the existence of some residual pores was also reported . Furthermore, most of the present production processes of SiC sintered bodies require some powder mixing (SiC powder, sintering aid, and so on) using the mechanical milling process (ball milling, and so on).…”

Section: Introductionmentioning

confidence: 99%

Novel SiC synthesis method applicable to SiC solid phase sintering

Usukawa

Ishikawa

2019

Int J Applied Ceramic Tech

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Most of the present production processes of SiC sintered bodies require some powder mixing using a mechanical milling process (ball milling, and so on). In this case, relatively long hours are required, and there is the problem of contamination during the preparation process. To avoid these problems, we developed a new process for obtaining a self-sinterable, stoichiometric SiC powder, whose precursor material is water-soluble; the precursor material was synthesized from aqueous silica and citric acid containing a small amount of aluminum compound. In order to obtain the stoichiometric SiC composition, the above aqueous precursor material was adequately cured in air (200°C-400°C); subsequently carbonization reaction (~800°C) in nitrogen atmosphere, carbothermal reduction (~1600°C) in argon atmosphere, and pressureless sintering (~1900°C) were performed. Among these processes, the curing process (cross-linking process) is very important for obtaining the equivalent composition (silica and carbon) for the subsequent carbothermal reduction. In this study, the adequate curing temperature and suitable preparation condition for the carbothermal reduction were investigated for the production of stoichiometric self-sinterable SiC powder. The pressureless sintered body achieved using the obtained SiC powder demonstrated a desirable trans-crystalline fracture behavior. K E Y W O R D Sprecursors, silicon carbide, sinter/sintering

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Electrical conductivity of C-SiC and Si-SiC prepared by spark plasma sintering

Cited by 11 publications

References 10 publications

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

A new process for creating a solid‐phase sintered body using a unique densification process between powders

Novel SiC synthesis method applicable to SiC solid phase sintering

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