2013
DOI: 10.1063/1.4804658
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Electrical conductivity of single-wall carbon nanotube films in strong electric field

Abstract: Carrier transport features in single-wall carbon nanotube (SWCNT) films under strong electric fields (up to 10 5 V/cm) are presented. Application of electrical pulses of nanosecond duration allowed to minimize Joule heating and resolve intrinsic nonlinearities with the electric field. Investigations within a wide range of temperatures-4.2-300 K-indicated that carrier localization as well as tunneling through the insulating barriers between conducting regions takes place in SWCNT films. Crossover from semicondu… Show more

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Cited by 4 publications
(5 citation statements)
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“…While the 0.61 mM dispersion is unstable, the 2.44 mM FC8 dispersion exhibits sharp absorption features originating from HiPco SWNT, as shown in Figure 2D. Interestingly, the corresponding PLE map (Figure 2E) exhibits smaller-d t chirality enrichments of SWNT in the order (8,4), (9,5), (8,6), (7,5), and (6,5) tubes. Their average d t is 0.86 nm, which contrasts sharply with that of the 2.44 mM FC12-HiPco dispersion: The absorption results (Figure S5A) show much larger d t distribution, with e S 11 extending up to 1600 nm, and the corresponding PLE map (Figure S5B) shows that PLbased chiralities range from (6,5) to (10,8) with a number-average d t of 0.96 nm.…”
Section: Resultsmentioning
confidence: 95%
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“…While the 0.61 mM dispersion is unstable, the 2.44 mM FC8 dispersion exhibits sharp absorption features originating from HiPco SWNT, as shown in Figure 2D. Interestingly, the corresponding PLE map (Figure 2E) exhibits smaller-d t chirality enrichments of SWNT in the order (8,4), (9,5), (8,6), (7,5), and (6,5) tubes. Their average d t is 0.86 nm, which contrasts sharply with that of the 2.44 mM FC12-HiPco dispersion: The absorption results (Figure S5A) show much larger d t distribution, with e S 11 extending up to 1600 nm, and the corresponding PLE map (Figure S5B) shows that PLbased chiralities range from (6,5) to (10,8) with a number-average d t of 0.96 nm.…”
Section: Resultsmentioning
confidence: 95%
“…PL-intensity based chirality abundances of FC12-and FC8-HiPco were illustrated as Weisman plots in Figure S5C. Clearly, FC8-HiPco exhibits smaller d t enrichment whose most abundant species are (8,4) as 38% as compared to FC12-HiPco in which comparably larger-d t (9,5), (8,6), and (7,6) altogether accounts for 32%. These results indicate that d t -selective SWNT dispersion originates from l S .…”
Section: Resultsmentioning
confidence: 99%
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“…semiconductor) component at high temperatures [Ravi et al 2013]. Meanwhile, some other SWNT networks exhibit a parallel combination of fluctuation assisted tunnelling (FAT) and quasi-1D metallic conduction at high applied electric fields [Seliuta et al 2013].…”
Section: A 'Field-dependent Fluctuation Assisted Tunnelling' Modelmentioning
confidence: 99%