Electrical control of a spin qubit in InSb nanowire quantum dots: Strongly suppressed spin relaxation in high magnetic field

Abstract

In this paper, we investigate the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong g factor and high magnetic field strength lead to the prevailing influence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak g factor, like GaAs or Si/SiGe. In this regime, we find that spin relaxation between qubit states is significantly suppressed due to the confinement perpendicular to the nanowire axis. We also find that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requires single or highly asymmetric double quantum dot gating potential.

Nanowires: Exponential speedup in quantum computing

“…A quantum computer can be built by utilizing the spin of an electron or hole that is confined within a semiconductor quantum dot (QD) [ 71 ]. Methods for manipulating the spin qubit using magnetic and electric fields are suggested [ [72] , [73] , [74] , [75] ]. The utilization of electric-dipole spin resonance (EDSR) for the electrical control of the spin qubit is favorable in physical implementations, despite the fact that managing the spin qubit is easier using magnetic fields [ [76] , [77] , [78] ].…”

Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots

“…To this end, approaches based on the magnetic [3,4] and electric [5,6] fields to manipulate the spin qubit are suggested. Even though the control of the spin qubit is more straightforward with magnetic fields, electrical control of the spin qubit using the electric-dipole spin resonance (EDSR) is favorable in physical realizations [7][8][9][10][11][12][13][14].…”