2012
DOI: 10.1063/1.3695160
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Electrical control of Curie temperature in cobalt using an ionic liquid film

Abstract: Magnetic and electric properties of transition-metal-doped ZnO films Appl. Phys. Lett. 79, 988 (2001); 10.1063/1.1384478Effect of growth temperature on Curie temperature of magnetic ultrathin films Co/Cu (100) Temperature-dependent magnetism in transition metal films observed by magnetic force microscopy and classical magnetometry

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Cited by 140 publications
(154 citation statements)
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“…For this reason, similar schemes were attempted on ultrathin ferromagnetic metal films at room temperature, despite persisting doubts on whether the tiny signal could be observed/exploited [23]. After the first breakthrough on the electric-field control of coercive field in FePd and FePt thin films by using ionic liquid to generate a giant interfacial electric-field [24], much progress has been achieved in recent years, such as the electrical control of magnetic anisotropy, coercive field, and even T C in Fe, CoFeB, and Co thin films [25][26][27][28][29][30][31][32]. More intriguing, electrical switching of FeCo and CoFeB ultrathin films in magnetic tunnel junctions (MTJs) has also been realized, laying the groundwork for their potential applications in MRAM [33][34][35][36][37][38].…”
Section: Introductionmentioning
confidence: 99%
“…For this reason, similar schemes were attempted on ultrathin ferromagnetic metal films at room temperature, despite persisting doubts on whether the tiny signal could be observed/exploited [23]. After the first breakthrough on the electric-field control of coercive field in FePd and FePt thin films by using ionic liquid to generate a giant interfacial electric-field [24], much progress has been achieved in recent years, such as the electrical control of magnetic anisotropy, coercive field, and even T C in Fe, CoFeB, and Co thin films [25][26][27][28][29][30][31][32]. More intriguing, electrical switching of FeCo and CoFeB ultrathin films in magnetic tunnel junctions (MTJs) has also been realized, laying the groundwork for their potential applications in MRAM [33][34][35][36][37][38].…”
Section: Introductionmentioning
confidence: 99%
“…6,7,8,19 The mechanism of the EF effect on MA in 3d-transition metals was considered using the electron occupancy change at d-orbitals caused by a Fermi level E F shift and/or a change in the electronic structure near E F . 7,23,24 Not only the MA modulation but also a change in Curie temperature T C was reported in a metallic Pt/Co system 10,11 as well as in ferromagnetic semiconductors. 1,3 Using ab initio calculation, the T C change due to EF application to a Pt/Co system was suggested to be explained by the modulation of the Heisenberg exchange parameter.…”
mentioning
confidence: 99%
“…Despite the limited penetration depth of an E-field in metals, the charge induced at the metal/dielectric interface on the topmost atomic layers is sufficient to modify the surface magnetic anisotropy energy (MAE) by a non negligible amount in ultrathin ferromagnetic layers as suggested by electronic structure calculations [9][10][11] . This has a particular impact in systems where the different anisotropy contributions almost cancel each other out, resulting in a large relative variation of the total effective MAE when the surface contribution is modified with the voltage [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] . We have studied here a Pt/Co/AlOx sample where the surface MAE could be varied in two ways : charging the metal/dielectric interface and modifying its oxidation.…”
mentioning
confidence: 99%