Electrical control of magnetism by electric field and current-induced torques

Fert, Albert; Ramesh, Ramamoorthy; Garcia, Vincent; Casanova, Fèlix; Bibes, Manuel

doi:10.1103/revmodphys.96.015005

Cited by 17 publications

(2 citation statements)

References 666 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14 These principles, first identified in the late 1980s and the early 1990s, have been foundational to developing spintronics. [15][16][17][18][19][20] GMR involves significant changes in the electrical resistance in response to an external magnetic field in layered ferromagnetic materials. Conversely, TMR is a phenomenon in which the resistance of a magnetic tunnel junction changes depending on the relative alignment of the magnetization in ferromagnetic layers separated by an insulating barrier.…”

Section: Introductionmentioning

confidence: 99%

“…While ferromagnetic materials are integral to the functioning of GMR-and TMR-based devices, they pose several challenges, particularly regarding device integration. [20][21][22][23][24] Integration issues stem from factors such as the incompatibility of ferromagnetic materials with standard semiconductor processes, difficulties in controlling their magnetic properties at the nanoscale, and challenges in maintaining consistent performance under varying operational conditions. In response to these challenges, semiconductor spintronics has emerged as a promising alternative.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Promises and technological prospects of two-dimensional Rashba materials

Bordoloi,

Garcia-Castro,

Romestan

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

The Rashba spin–orbit coupling effect, primarily arising from structural-inversion asymmetry in periodic crystals, has garnered considerable attention due to its tunability and potential applications in spintronics. Its capability to manipulate electron spin without an external magnetic field opens new avenues for spintronic device design, particularly in semiconductor technology. Within this framework, 2D Rashba materials hold special interest due to their inherent characteristics, which facilitate miniaturization and engineering capabilities. In this Perspective article, we provide an overview of recent advancements in the research of 2D Rashba materials, aiming to offer a comprehensive understanding of the diverse manifestations and multifaceted implications of the Rashba effect in material science. Rather than merely presenting a list of materials, our approach involves synthesizing various viewpoints, assessing current trends, and addressing challenges within the field. Our objective is to bridge the gap between fundamental research and practical applications by correlating each material with the necessary advancements required to translate theoretical concepts into tangible technologies. Furthermore, we highlight promising avenues for future research and development, drawing from insights gleaned from the current state of the field.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Promises and technological prospects of two-dimensional Rashba materials

Bordoloi,

Garcia-Castro,

Romestan

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Ferroelectric Control of Spin‐Orbitronics

Gu,

Zheng,

Jia

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

Spin‐orbit coupling refers to the relativistic interaction between the spin and orbital motions of electrons. This interaction leads to numerous intriguing phenomena, including spin‐orbit torques, spin–momentum locking, topological spin textures, etc., that have recently gained prominence in the field of spin‐orbitronics. In particular, the emerging ferroelectric control is recognized and validated as an effective means to enhance energy efficiency across a broad spectrum of spin‐orbitronic devices. Here, cutting‐edge research on ferroelectric control of spin‐orbitronics (FECSO) by means of spontaneous polarization, reversible ferroelectric switching, and multiferroic coupling, are comprehensively reviewed. Two fascinating topics are mainly discussed: topological spin texture and spin‐charge interconversion. The classification of control mechanisms for different interactions in FECSO is summarized first. Then, from the perspective of material classification, the ferroelectric‐controlled spin‐orbit coupling with tunable topological spin texture in oxide systems, magnetic metal multilayers, and 2D van der Waals materials is reviewed. Subsequently, the ferroelectric‐tunable spin‐charge interconversion on heavy metal layers, oxide interfaces, and ferroelectric Rashba semiconductors is highlighted. In the end, the challenges and forthcoming prospects of FECSO are discussed. This work may provide pertinent and forward‐thinking guidance to accelerate the ongoing advancement of this field.

show abstract

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Wang,

Chen,

Yun

et al. 2025

Adv Funct Materials

View full text Add to dashboard Cite

Ferroelectrics are considered to be promising candidates for highly energy‐efficient electronic devices in future information technologies owing to their nonvolatile and low‐energy operation of spontaneous electric polarization. Driven by the pervasive and growing demands for miniaturization and energy efficiency in nanoelectronics, further reductions in the operating voltage of ferroelectric‐based devices are dispensable and thus have received immense attentions. Recent remarkable advances in atomic‐scale synthesis, cutting‐edge characterizations, and multiscale theoretical calculations of ferroelectrics have gained unprecedented insights into the manipulation of emergent functionalities in multiple length scales, which helps the discovery of nontrivial polar structures and designs of device architectures toward the promise of ultralow‐power consumption. Here, state‐of‐the‐art strategies for reducing operating voltage in ferroelectric materials and devices are reviewed. This article starts with a brief introduction and major achievements in ferroelectrics, and expounds on the techniques to probe the polarization‐switching process. Moreover, this article focuses predominantly on recent advancements in achieving low operating voltages through various prevalent strategies such as thickness scaling, defect engineering, chemical doping, surface and interfacial design, strain engineering. Finally, perspectives with scientific and technical challenges are discussed, aiming to facilitate the energy‐efficient applications of ferroelectric materials and devices in future information technologies.

show abstract

Electrical control of magnetism by electric field and current-induced torques

Cited by 17 publications

References 666 publications

Promises and technological prospects of two-dimensional Rashba materials

Promises and technological prospects of two-dimensional Rashba materials

Ferroelectric Control of Spin‐Orbitronics

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Contact Info

Product

Resources

About