Electrical crosstalk suppression for mesa-based in-device passivated InGaAs photodetectors

Inter-pixel crosstalk improvement based on a thin crosstalk-block layer for mesa-based InGaAs photodetectors

“…The inclusion of the crosstalk-block layer has no considerable effect on the electric field distribution inside pixels 15 and has no limitation on the pixel shrinkage while decreasing the inter-pixel crosstalk. 16 Upper and lower thickness values of the crosstalk-block layer are bounded to prevent the reduction in the photo-collection efficiency and degeneration in the selective etching process, respectively. The electrical crosstalk of depleted passivation and modified depleted passivation structures are examined in TCAD-Sentaurus software by an experimental-like technique in their five-pixel mini array.…”

Influence of pixel mesa structure on the performance of InGaAs focal plane array detectors

“…In the past decades, the pixel pitch of InGaAs FPA detectors has been gradually reduced 4 , which makes the device's electrical crosstalk a critical issue affecting the resolution of the detector. At present, the methods of reducing electrical crosstalk include the fabrication of protective ring [5] , and the isolation of mesa etching [6] .…”